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Diode - Zener - Moja

BZT52C6V2-G RHG
Taiwan Semiconductor Corporation

BZT52C6V2-G RHG

Sehemu ya hisa.: 234

Voltage - Zener (Nom) (Vz): 6.2V, Uvumilivu: ±5%, Nguvu - Max: 350mW, Impedance (Max) (Zzt): 10 Ohms, Sasa - Reverse Leakage @ Vr: 3µA @ 4V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZX584B5V1 RSG
Taiwan Semiconductor Corporation

BZX584B5V1 RSG

Sehemu ya hisa.: 224

Voltage - Zener (Nom) (Vz): 5.1V, Uvumilivu: ±2%, Nguvu - Max: 150mW, Impedance (Max) (Zzt): 60 Ohms, Sasa - Reverse Leakage @ Vr: 2µA @ 2V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C39 RHG
Taiwan Semiconductor Corporation

BZT52C39 RHG

Sehemu ya hisa.: 252

Voltage - Zener (Nom) (Vz): 39V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 130 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 27.3V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C43K RKG
Taiwan Semiconductor Corporation

BZT52C43K RKG

Sehemu ya hisa.: 225

Voltage - Zener (Nom) (Vz): 43V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 150 Ohms, Sasa - Reverse Leakage @ Vr: 2µA @ 33V,

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BZT52B56S RRG
Taiwan Semiconductor Corporation

BZT52B56S RRG

Sehemu ya hisa.: 199

Voltage - Zener (Nom) (Vz): 56V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 200 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 39.2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C15K RKG
Taiwan Semiconductor Corporation

BZT52C15K RKG

Sehemu ya hisa.: 256

Voltage - Zener (Nom) (Vz): 15V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 30 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 11V,

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BZT52B11 RHG
Taiwan Semiconductor Corporation

BZT52B11 RHG

Sehemu ya hisa.: 174

Voltage - Zener (Nom) (Vz): 11V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 20 Ohms, Sasa - Reverse Leakage @ Vr: 90nA @ 8V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B5V6 RHG
Taiwan Semiconductor Corporation

BZT52B5V6 RHG

Sehemu ya hisa.: 195

Voltage - Zener (Nom) (Vz): 5.6V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 40 Ohms, Sasa - Reverse Leakage @ Vr: 900nA @ 2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZX84C16 RFG
Taiwan Semiconductor Corporation

BZX84C16 RFG

Sehemu ya hisa.: 185

Voltage - Zener (Nom) (Vz): 16V, Uvumilivu: ±5%, Nguvu - Max: 300mW, Impedance (Max) (Zzt): 40 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 11.2V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C9V1-G RHG
Taiwan Semiconductor Corporation

BZT52C9V1-G RHG

Sehemu ya hisa.: 198

Voltage - Zener (Nom) (Vz): 9.1V, Uvumilivu: ±5%, Nguvu - Max: 350mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 500nA @ 6V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B22-G RHG
Taiwan Semiconductor Corporation

BZT52B22-G RHG

Sehemu ya hisa.: 228

Voltage - Zener (Nom) (Vz): 22V, Uvumilivu: ±2%, Nguvu - Max: 410mW, Impedance (Max) (Zzt): 55 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 15.4V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C2V7K RKG
Taiwan Semiconductor Corporation

BZT52C2V7K RKG

Sehemu ya hisa.: 233

Voltage - Zener (Nom) (Vz): 2.7V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 100 Ohms, Sasa - Reverse Leakage @ Vr: 120µA @ 1V,

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BZT52C5V1-G RHG
Taiwan Semiconductor Corporation

BZT52C5V1-G RHG

Sehemu ya hisa.: 196

Voltage - Zener (Nom) (Vz): 5.1V, Uvumilivu: ±5%, Nguvu - Max: 350mW, Impedance (Max) (Zzt): 60 Ohms, Sasa - Reverse Leakage @ Vr: 2µA @ 2V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C3V9S RRG
Taiwan Semiconductor Corporation

BZT52C3V9S RRG

Sehemu ya hisa.: 217

Voltage - Zener (Nom) (Vz): 3.9V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 2.7µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B6V2-G RHG
Taiwan Semiconductor Corporation

BZT52B6V2-G RHG

Sehemu ya hisa.: 169

Voltage - Zener (Nom) (Vz): 6.2V, Uvumilivu: ±2%, Nguvu - Max: 410mW, Impedance (Max) (Zzt): 10 Ohms, Sasa - Reverse Leakage @ Vr: 3µA @ 4V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B51 RHG
Taiwan Semiconductor Corporation

BZT52B51 RHG

Sehemu ya hisa.: 193

Voltage - Zener (Nom) (Vz): 51V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 180 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 35.7V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C5V1 RHG
Taiwan Semiconductor Corporation

BZT52C5V1 RHG

Sehemu ya hisa.: 170

Voltage - Zener (Nom) (Vz): 5.1V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 60 Ohms, Sasa - Reverse Leakage @ Vr: 1.8µA @ 2V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C3V9-G RHG
Taiwan Semiconductor Corporation

BZT52C3V9-G RHG

Sehemu ya hisa.: 240

Voltage - Zener (Nom) (Vz): 3.9V, Uvumilivu: ±5%, Nguvu - Max: 350mW, Impedance (Max) (Zzt): 90 Ohms, Sasa - Reverse Leakage @ Vr: 3µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C22K RKG
Taiwan Semiconductor Corporation

BZT52C22K RKG

Sehemu ya hisa.: 246

Voltage - Zener (Nom) (Vz): 22V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 55 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 17V,

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BZX584B8V2 RSG
Taiwan Semiconductor Corporation

BZX584B8V2 RSG

Sehemu ya hisa.: 227

Voltage - Zener (Nom) (Vz): 8.2V, Uvumilivu: ±2%, Nguvu - Max: 150mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 700nA @ 5V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZX84C3V3 RFG
Taiwan Semiconductor Corporation

BZX84C3V3 RFG

Sehemu ya hisa.: 224

Voltage - Zener (Nom) (Vz): 3.3V, Uvumilivu: ±5%, Nguvu - Max: 300mW, Impedance (Max) (Zzt): 95 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZX84C9V1 RFG
Taiwan Semiconductor Corporation

BZX84C9V1 RFG

Sehemu ya hisa.: 254

Voltage - Zener (Nom) (Vz): 9.1V, Uvumilivu: ±5%, Nguvu - Max: 300mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 500nA @ 6V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C2V7S RRG
Taiwan Semiconductor Corporation

BZT52C2V7S RRG

Sehemu ya hisa.: 252

Voltage - Zener (Nom) (Vz): 2.7V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 100 Ohms, Sasa - Reverse Leakage @ Vr: 18µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C27S RRG
Taiwan Semiconductor Corporation

BZT52C27S RRG

Sehemu ya hisa.: 178

Voltage - Zener (Nom) (Vz): 27V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 80 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 18.9V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C13K RKG
Taiwan Semiconductor Corporation

BZT52C13K RKG

Sehemu ya hisa.: 169

Voltage - Zener (Nom) (Vz): 13V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 30 Ohms, Sasa - Reverse Leakage @ Vr: 100nA @ 10V,

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BZT52C3V0-G RHG
Taiwan Semiconductor Corporation

BZT52C3V0-G RHG

Sehemu ya hisa.: 213

Voltage - Zener (Nom) (Vz): 3V, Uvumilivu: ±5%, Nguvu - Max: 350mW, Impedance (Max) (Zzt): 95 Ohms, Sasa - Reverse Leakage @ Vr: 10µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B68 RHG
Taiwan Semiconductor Corporation

BZT52B68 RHG

Sehemu ya hisa.: 172

Voltage - Zener (Nom) (Vz): 68V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 240 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 47.6V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B62 RHG
Taiwan Semiconductor Corporation

BZT52B62 RHG

Sehemu ya hisa.: 192

Voltage - Zener (Nom) (Vz): 62V, Uvumilivu: ±2%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 215 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 43.4V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZX84C2V4 RFG
Taiwan Semiconductor Corporation

BZX84C2V4 RFG

Sehemu ya hisa.: 218

Voltage - Zener (Nom) (Vz): 2.4V, Uvumilivu: ±5%, Nguvu - Max: 300mW, Impedance (Max) (Zzt): 100 Ohms, Sasa - Reverse Leakage @ Vr: 50µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B6V8S RRG
Taiwan Semiconductor Corporation

BZT52B6V8S RRG

Sehemu ya hisa.: 243

Voltage - Zener (Nom) (Vz): 6.8V, Uvumilivu: ±2%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 1.8µA @ 4V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52C8V2S RRG
Taiwan Semiconductor Corporation

BZT52C8V2S RRG

Sehemu ya hisa.: 207

Voltage - Zener (Nom) (Vz): 8.2V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 15 Ohms, Sasa - Reverse Leakage @ Vr: 630nA @ 5V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZT52B10-G RHG
Taiwan Semiconductor Corporation

BZT52B10-G RHG

Sehemu ya hisa.: 232

Voltage - Zener (Nom) (Vz): 10V, Uvumilivu: ±2%, Nguvu - Max: 410mW, Impedance (Max) (Zzt): 20 Ohms, Sasa - Reverse Leakage @ Vr: 200nA @ 7V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C24S RRG
Taiwan Semiconductor Corporation

BZT52C24S RRG

Sehemu ya hisa.: 226

Voltage - Zener (Nom) (Vz): 24V, Uvumilivu: ±5%, Nguvu - Max: 200mW, Impedance (Max) (Zzt): 70 Ohms, Sasa - Reverse Leakage @ Vr: 45nA @ 16.8V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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BZX84C5V6 RFG
Taiwan Semiconductor Corporation

BZX84C5V6 RFG

Sehemu ya hisa.: 192

Voltage - Zener (Nom) (Vz): 5.6V, Uvumilivu: ±5%, Nguvu - Max: 300mW, Impedance (Max) (Zzt): 40 Ohms, Sasa - Reverse Leakage @ Vr: 1µA @ 2V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52B5V6-G RHG
Taiwan Semiconductor Corporation

BZT52B5V6-G RHG

Sehemu ya hisa.: 180

Voltage - Zener (Nom) (Vz): 5.6V, Uvumilivu: ±2%, Nguvu - Max: 410mW, Impedance (Max) (Zzt): 40 Ohms, Sasa - Reverse Leakage @ Vr: 1µA @ 2V, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 10mA,

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BZT52C3V0 RHG
Taiwan Semiconductor Corporation

BZT52C3V0 RHG

Sehemu ya hisa.: 181

Voltage - Zener (Nom) (Vz): 3V, Uvumilivu: ±5%, Nguvu - Max: 500mW, Impedance (Max) (Zzt): 100 Ohms, Sasa - Reverse Leakage @ Vr: 9µA @ 1V, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 10mA,

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