Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | N-Channel |
Teknolojia | MOSFET (Metal Oxide) |
Futa kwa Chanzo cha Voltage (Vdss) | 800V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 5.7A (Tc) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 950 mOhm @ 3.6A, 10V |
Vgs (th) (Max) @ Id | 3.9V @ 250µA |
Malipo ya Lango (Qg) (Max) @ Vgs | 31nC @ 10V |
Vgs (Upeo) | ±20V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 785pF @ 100V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 83W (Tc) |
Joto la Uendeshaji | -55°C ~ 150°C (TJ) |
Aina ya Kuweka | Surface Mount |
Kifurushi cha Kifaa cha muuzaji | PG-TO252-3 |
Kifurushi / Kesi | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |