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PMIC - Madereva wa Lango

DGD2103AS8-13
Diodes Incorporated

DGD2103AS8-13

Sehemu ya hisa.: 838

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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DGD2104AS8-13
Diodes Incorporated

DGD2104AS8-13

Sehemu ya hisa.: 767

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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DGD2103S8-13
Diodes Incorporated

DGD2103S8-13

Sehemu ya hisa.: 9530

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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DGD2104S8-13
Diodes Incorporated

DGD2104S8-13

Sehemu ya hisa.: 9543

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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ZXGD3101T8TA
Diodes Incorporated

ZXGD3101T8TA

Sehemu ya hisa.: 7018

Usanidi Unaoendeshwa: High-Side or Low-Side, Aina ya Kituo: Single, Idadi ya Madereva: 1, Aina ya Lango: N-Channel MOSFET, Voltage - Ugavi: 5V ~ 15V,

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ZXGD3102T8TA
Diodes Incorporated

ZXGD3102T8TA

Sehemu ya hisa.: 51073

Usanidi Unaoendeshwa: High-Side or Low-Side, Aina ya Kituo: Single, Idadi ya Madereva: 1, Aina ya Lango: N-Channel MOSFET, Voltage - Ugavi: 5V ~ 15V,

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DGD2136S28-13
Diodes Incorporated

DGD2136S28-13

Sehemu ya hisa.: 46320

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.4V,

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DGD21904MS14-13
Diodes Incorporated

DGD21904MS14-13

Sehemu ya hisa.: 10803

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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DGD2110S16-13
Diodes Incorporated

DGD2110S16-13

Sehemu ya hisa.: 67435

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 6V, 9.5V,

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DGD2184S8-13
Diodes Incorporated

DGD2184S8-13

Sehemu ya hisa.: 90446

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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DGD2108S8-13
Diodes Incorporated

DGD2108S8-13

Sehemu ya hisa.: 90479

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.6V, 2.5V,

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DGD2190S8-13
Diodes Incorporated

DGD2190S8-13

Sehemu ya hisa.: 91981

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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DGD2118S8-13
Diodes Incorporated

DGD2118S8-13

Sehemu ya hisa.: 75404

Usanidi Unaoendeshwa: High-Side, Aina ya Kituo: Single, Idadi ya Madereva: 1, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 6V, 9.5V,

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DGD21844S14-13
Diodes Incorporated

DGD21844S14-13

Sehemu ya hisa.: 68750

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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DGD21814S14-13
Diodes Incorporated

DGD21814S14-13

Sehemu ya hisa.: 55351

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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DGD2106MS8-13
Diodes Incorporated

DGD2106MS8-13

Sehemu ya hisa.: 10831

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.6V, 2.5V,

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DGD21904S14-13
Diodes Incorporated

DGD21904S14-13

Sehemu ya hisa.: 70463

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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DGD2117S8-13
Diodes Incorporated

DGD2117S8-13

Sehemu ya hisa.: 75366

Usanidi Unaoendeshwa: High-Side, Aina ya Kituo: Single, Idadi ya Madereva: 1, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 6V, 9.5V,

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DGD21064MS14-13
Diodes Incorporated

DGD21064MS14-13

Sehemu ya hisa.: 137

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.6V, 2.5V,

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DGD2113S16-13
Diodes Incorporated

DGD2113S16-13

Sehemu ya hisa.: 60941

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 6V, 9.5V,

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DGD2106S8-13
Diodes Incorporated

DGD2106S8-13

Sehemu ya hisa.: 72344

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.6V, 2.5V,

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DGD21084S14-13
Diodes Incorporated

DGD21084S14-13

Sehemu ya hisa.: 60317

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.6V, 2.5V,

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DGD2181S8-13
Diodes Incorporated

DGD2181S8-13

Sehemu ya hisa.: 60280

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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DGD2190MS8-13
Diodes Incorporated

DGD2190MS8-13

Sehemu ya hisa.: 10842

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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ZXGD3006E6TA
Diodes Incorporated

ZXGD3006E6TA

Sehemu ya hisa.: 165812

Usanidi Unaoendeshwa: Low-Side, Aina ya Kituo: Single, Idadi ya Madereva: 1, Aina ya Lango: IGBT, SiC MOSFET, Voltage - Ugavi: 40V (Max),

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DGD21042S8-13
Diodes Incorporated

DGD21042S8-13

Sehemu ya hisa.: 141765

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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ZXGD3001E6QTA
Diodes Incorporated

ZXGD3001E6QTA

Sehemu ya hisa.: 169546

Usanidi Unaoendeshwa: Low-Side, Aina ya Kituo: Single, Idadi ya Madereva: 1, Aina ya Lango: N-Channel MOSFET, Voltage - Ugavi: 12V (Max),

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DGD05463FN-7
Diodes Incorporated

DGD05463FN-7

Sehemu ya hisa.: 9932

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: N-Channel MOSFET, Voltage - Ugavi: 4.5V ~ 14V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.4V,

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ZXGD3003E6QTA
Diodes Incorporated

ZXGD3003E6QTA

Sehemu ya hisa.: 184629

Usanidi Unaoendeshwa: Low-Side, Aina ya Kituo: Single, Idadi ya Madereva: 1, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 40V (Max),

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ZXGD3107N8TC
Diodes Incorporated

ZXGD3107N8TC

Sehemu ya hisa.: 149499

Usanidi Unaoendeshwa: Low-Side, Aina ya Kituo: Single, Idadi ya Madereva: 1, Aina ya Lango: N-Channel MOSFET, Voltage - Ugavi: 40V (Max),

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DGD0506AM10-13
Diodes Incorporated

DGD0506AM10-13

Sehemu ya hisa.: 10806

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: N-Channel MOSFET, Voltage - Ugavi: 8V ~ 14V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.4V,

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DGD1504S8-13
Diodes Incorporated

DGD1504S8-13

Sehemu ya hisa.: 137731

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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DGD05062FN-7
Diodes Incorporated

DGD05062FN-7

Sehemu ya hisa.: 9912

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: N-Channel MOSFET, Voltage - Ugavi: 8V ~ 14V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.4V,

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DGD21064S14-13
Diodes Incorporated

DGD21064S14-13

Sehemu ya hisa.: 113751

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.6V, 2.5V,

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DGD05473FN-7
Diodes Incorporated

DGD05473FN-7

Sehemu ya hisa.: 9929

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: N-Channel MOSFET, Voltage - Ugavi: 4.5V ~ 14V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.4V,

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DGD1503S8-13
Diodes Incorporated

DGD1503S8-13

Sehemu ya hisa.: 174421

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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