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Diode - Warekebishaji - Moja

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  • Diode - Warekebishaji - Moja
1N8026-GA
GeneSiC Semiconductor

1N8026-GA

Sehemu ya hisa.: 413

Aina ya Diode: Silicon Carbide Schottky, Voltage - Kubadilisha DC (Vr) (Max): 1200V, Sasa - Wastani Waliyorekebishwa (Io): 8A (DC), Voltage - Sambaza (Vf) (Max) @ Kama: 1.6V @ 2.5A, Kasi: No Recovery Time > 500mA (Io), Rudisha Saa ya Kuokoa (trr): 0ns,

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1N1183A
GeneSiC Semiconductor

1N1183A

Sehemu ya hisa.: 9667

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 40A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 40A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N3209R
GeneSiC Semiconductor

1N3209R

Sehemu ya hisa.: 13664

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 15A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N3294AR
GeneSiC Semiconductor

1N3294AR

Sehemu ya hisa.: 3460

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 100A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 100A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N1188A
GeneSiC Semiconductor

1N1188A

Sehemu ya hisa.: 9645

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 40A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 40A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N4596R
GeneSiC Semiconductor

1N4596R

Sehemu ya hisa.: 3424

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 1400V, Sasa - Wastani Waliyorekebishwa (Io): 150A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 150A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N4590
GeneSiC Semiconductor

1N4590

Sehemu ya hisa.: 3411

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 150A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 150A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N5834
GeneSiC Semiconductor

1N5834

Sehemu ya hisa.: 5569

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 40A, Voltage - Sambaza (Vf) (Max) @ Kama: 590mV @ 40A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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1N6097R
GeneSiC Semiconductor

1N6097R

Sehemu ya hisa.: 5569

Aina ya Diode: Schottky, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 50A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 50A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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1N3211
GeneSiC Semiconductor

1N3211

Sehemu ya hisa.: 13543

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 15A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N4592
GeneSiC Semiconductor

1N4592

Sehemu ya hisa.: 3455

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 150A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 150A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N2128AR
GeneSiC Semiconductor

1N2128AR

Sehemu ya hisa.: 11438

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 60A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 60A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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150KR80A
GeneSiC Semiconductor

150KR80A

Sehemu ya hisa.: 3417

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 150A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.33V @ 150A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N5831R
GeneSiC Semiconductor

1N5831R

Sehemu ya hisa.: 5568

Aina ya Diode: Schottky, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 35V, Sasa - Wastani Waliyorekebishwa (Io): 25A, Voltage - Sambaza (Vf) (Max) @ Kama: 580mV @ 25A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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150K80A
GeneSiC Semiconductor

150K80A

Sehemu ya hisa.: 3418

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 150A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.33V @ 150A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N3295AR
GeneSiC Semiconductor

1N3295AR

Sehemu ya hisa.: 3433

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 100A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 100A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N3882
GeneSiC Semiconductor

1N3882

Sehemu ya hisa.: 13603

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 6A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 6A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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1N5829R
GeneSiC Semiconductor

1N5829R

Sehemu ya hisa.: 5592

Aina ya Diode: Schottky, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 25A, Voltage - Sambaza (Vf) (Max) @ Kama: 580mV @ 25A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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1N5831
GeneSiC Semiconductor

1N5831

Sehemu ya hisa.: 5574

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 35V, Sasa - Wastani Waliyorekebishwa (Io): 25A, Voltage - Sambaza (Vf) (Max) @ Kama: 580mV @ 25A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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1N1206A
GeneSiC Semiconductor

1N1206A

Sehemu ya hisa.: 15000

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 12A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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150K40A
GeneSiC Semiconductor

150K40A

Sehemu ya hisa.: 3458

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 150A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.33V @ 150A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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150KR100A
GeneSiC Semiconductor

150KR100A

Sehemu ya hisa.: 3439

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 150A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.33V @ 150A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N2135AR
GeneSiC Semiconductor

1N2135AR

Sehemu ya hisa.: 9650

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 60A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 60A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N3293AR
GeneSiC Semiconductor

1N3293AR

Sehemu ya hisa.: 3442

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 100A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 100A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N6096
GeneSiC Semiconductor

1N6096

Sehemu ya hisa.: 5594

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 25A, Voltage - Sambaza (Vf) (Max) @ Kama: 580mV @ 25A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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1N5828R
GeneSiC Semiconductor

1N5828R

Sehemu ya hisa.: 5618

Aina ya Diode: Schottky, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 15A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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1N1204AR
GeneSiC Semiconductor

1N1204AR

Sehemu ya hisa.: 29070

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 12A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N3893
GeneSiC Semiconductor

1N3893

Sehemu ya hisa.: 12917

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 12A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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1N2137AR
GeneSiC Semiconductor

1N2137AR

Sehemu ya hisa.: 9629

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 500V, Sasa - Wastani Waliyorekebishwa (Io): 60A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 60A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N1188
GeneSiC Semiconductor

1N1188

Sehemu ya hisa.: 9467

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 35A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 35A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N1199A
GeneSiC Semiconductor

1N1199A

Sehemu ya hisa.: 24991

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 12A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N1204A
GeneSiC Semiconductor

1N1204A

Sehemu ya hisa.: 21792

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 12A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N3214R
GeneSiC Semiconductor

1N3214R

Sehemu ya hisa.: 13835

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 15A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N3890R
GeneSiC Semiconductor

1N3890R

Sehemu ya hisa.: 13730

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 12A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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1N4594
GeneSiC Semiconductor

1N4594

Sehemu ya hisa.: 3451

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 150A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 150A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N4596
GeneSiC Semiconductor

1N4596

Sehemu ya hisa.: 3402

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 1400V, Sasa - Wastani Waliyorekebishwa (Io): 150A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 150A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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