Diode - Watengenezaji wa Daraja | Bidhaa tofauti za semiconductor | 1

GHXS010A060S-D1

Sehemu ya hisa.: 2081

Aina ya Diode: Single Phase, Teknolojia: Silicon Carbide Schottky, Voltage - Upeo wa Kilele (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 10A, Sasa - Reverse Leakage @ Vr: 100µA @ 600V,

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Global Power Technologies Group

GHXS045A120S-D1

Sehemu ya hisa.: 537

Aina ya Diode: Single Phase, Teknolojia: Silicon Carbide Schottky, Voltage - Upeo wa Kilele (Max): 1.2kV, Sasa - Wastani Waliyorekebishwa (Io): 45A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 45A, Sasa - Reverse Leakage @ Vr: 300µA @ 1200V,

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Global Power Technologies Group

GHXS045A120S-D1E

Sehemu ya hisa.: 534

Aina ya Diode: Single Phase, Teknolojia: Silicon Carbide Schottky, Voltage - Upeo wa Kilele (Max): 1.2kV, Sasa - Wastani Waliyorekebishwa (Io): 45A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 45A, Sasa - Reverse Leakage @ Vr: 300µA @ 1200V,

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Global Power Technologies Group

GHXS015A120S-D1E

Sehemu ya hisa.: 1190

Aina ya Diode: Single Phase, Teknolojia: Silicon Carbide Schottky, Voltage - Upeo wa Kilele (Max): 1.2kV, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 15A, Sasa - Reverse Leakage @ Vr: 100µA @ 1200V,

Wishlist.

Global Power Technologies Group

GHXS015A120S-D1

Sehemu ya hisa.: 1154

Aina ya Diode: Single Phase, Teknolojia: Silicon Carbide Schottky, Voltage - Upeo wa Kilele (Max): 1.2kV, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 15A, Sasa - Reverse Leakage @ Vr: 100µA @ 1200V,

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Global Power Technologies Group

GHXS020A060S-D1

Sehemu ya hisa.: 1478

Aina ya Diode: Single Phase, Teknolojia: Silicon Carbide Schottky, Voltage - Upeo wa Kilele (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 20A, Sasa - Reverse Leakage @ Vr: 200µA @ 600V,

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Global Power Technologies Group

GHXS030A060S-D1

Sehemu ya hisa.: 1214

Aina ya Diode: Single Phase, Teknolojia: Silicon Carbide Schottky, Voltage - Upeo wa Kilele (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 30A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 30A, Sasa - Reverse Leakage @ Vr: 100µA @ 600V,

Wishlist.

Global Power Technologies Group

GHXS030A120S-D1

Sehemu ya hisa.: 658

Aina ya Diode: Single Phase, Teknolojia: Silicon Carbide Schottky, Voltage - Upeo wa Kilele (Max): 1.2kV, Sasa - Wastani Waliyorekebishwa (Io): 30A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 30A, Sasa - Reverse Leakage @ Vr: 200µA @ 1200V,

Wishlist.

Global Power Technologies Group

GHXS030A120S-D1E

Sehemu ya hisa.: 720

Aina ya Diode: Single Phase, Teknolojia: Silicon Carbide Schottky, Voltage - Upeo wa Kilele (Max): 1.2kV, Sasa - Wastani Waliyorekebishwa (Io): 30A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 30A, Sasa - Reverse Leakage @ Vr: 200µA @ 1200V,

Wishlist.

Global Power Technologies Group

GHXS020A060S-D1E

Sehemu ya hisa.: 1471

Aina ya Diode: Single Phase, Teknolojia: Silicon Carbide Schottky, Voltage - Upeo wa Kilele (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 20A, Sasa - Reverse Leakage @ Vr: 200µA @ 600V,

Wishlist.

Global Power Technologies Group

GHXS010A060S-D1E

Sehemu ya hisa.: 2062

Aina ya Diode: Single Phase, Teknolojia: Silicon Carbide Schottky, Voltage - Upeo wa Kilele (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 10A, Sasa - Reverse Leakage @ Vr: 100µA @ 600V,

Wishlist.

Global Power Technologies Group

GHXS030A060S-D1E

Sehemu ya hisa.: 1161

Aina ya Diode: Single Phase, Teknolojia: Silicon Carbide Schottky, Voltage - Upeo wa Kilele (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 30A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 30A, Sasa - Reverse Leakage @ Vr: 100µA @ 600V,

Wishlist.