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Transistors - FETs, MOSFETs - Moja

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  • Transistors - FETs, MOSFETs - Moja
BSC0904NSIATMA1
Infineon Technologies

BSC0904NSIATMA1

Sehemu ya hisa.: 7480

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Ta), 78A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 30A, 10V,

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BSZ050N03LSGATMA1
Infineon Technologies

BSZ050N03LSGATMA1

Sehemu ya hisa.: 147799

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 16A (Ta), 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V,

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BSZ0994NSATMA1
Infineon Technologies

BSZ0994NSATMA1

Sehemu ya hisa.: 149303

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 5A, 10V,

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BSC440N10NS3GATMA1
Infineon Technologies

BSC440N10NS3GATMA1

Sehemu ya hisa.: 119139

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A (Ta), 18A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V,

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BSZ065N03LSATMA1
Infineon Technologies

BSZ065N03LSATMA1

Sehemu ya hisa.: 7461

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V,

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BSS159NH6906XTSA1
Infineon Technologies

BSS159NH6906XTSA1

Sehemu ya hisa.: 190333

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 230mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V,

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BSP320SH6433XTMA1
Infineon Technologies

BSP320SH6433XTMA1

Sehemu ya hisa.: 138092

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.9A (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

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BSL373SNH6327XTSA1
Infineon Technologies

BSL373SNH6327XTSA1

Sehemu ya hisa.: 190490

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 230 mOhm @ 2A, 10V,

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BSL296SNH6327XTSA1
Infineon Technologies

BSL296SNH6327XTSA1

Sehemu ya hisa.: 106246

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 460 mOhm @ 1.26A, 10V,

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BSS126H6906XTSA1
Infineon Technologies

BSS126H6906XTSA1

Sehemu ya hisa.: 153215

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

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BSZ100N03LSGATMA1
Infineon Technologies

BSZ100N03LSGATMA1

Sehemu ya hisa.: 89341

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V,

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BSC100N03MSGATMA1
Infineon Technologies

BSC100N03MSGATMA1

Sehemu ya hisa.: 196508

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), 44A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V,

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BSS169H6906XTSA1
Infineon Technologies

BSS169H6906XTSA1

Sehemu ya hisa.: 152457

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 170mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

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BSC090N03MSGATMA1
Infineon Technologies

BSC090N03MSGATMA1

Sehemu ya hisa.: 195504

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), 48A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V,

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BSC080N03LSGATMA1
Infineon Technologies

BSC080N03LSGATMA1

Sehemu ya hisa.: 140304

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Ta), 53A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V,

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BSZ120P03NS3EGATMA1
Infineon Technologies

BSZ120P03NS3EGATMA1

Sehemu ya hisa.: 146859

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Ta), 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V,

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BSZ120P03NS3GATMA1
Infineon Technologies

BSZ120P03NS3GATMA1

Sehemu ya hisa.: 154285

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Ta), 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V,

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BSS138WH6327XTSA1
Infineon Technologies

BSS138WH6327XTSA1

Sehemu ya hisa.: 171697

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 280mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V,

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BSP88H6327XTSA1
Infineon Technologies

BSP88H6327XTSA1

Sehemu ya hisa.: 183070

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 240V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 350mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.8V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V,

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BSZ180P03NS3EGATMA1
Infineon Technologies

BSZ180P03NS3EGATMA1

Sehemu ya hisa.: 186097

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), 39.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V,

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BSZ180P03NS3GATMA1
Infineon Technologies

BSZ180P03NS3GATMA1

Sehemu ya hisa.: 124428

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), 39.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V,

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BSC886N03LSGATMA1
Infineon Technologies

BSC886N03LSGATMA1

Sehemu ya hisa.: 123249

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), 65A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V,

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BSZ130N03MSGATMA1
Infineon Technologies

BSZ130N03MSGATMA1

Sehemu ya hisa.: 7438

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 10V,

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BSS139H6906XTSA1
Infineon Technologies

BSS139H6906XTSA1

Sehemu ya hisa.: 186343

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 0V, 10V, Rds On (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V,

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BSC0996NSATMA1
Infineon Technologies

BSC0996NSATMA1

Sehemu ya hisa.: 103955

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 34V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9 mOhm @ 8A, 10V,

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BSC079N03LSCGATMA1
Infineon Technologies

BSC079N03LSCGATMA1

Sehemu ya hisa.: 187012

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Ta), 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 30A, 10V,

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BSL372SNH6327XTSA1
Infineon Technologies

BSL372SNH6327XTSA1

Sehemu ya hisa.: 143818

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 220 mOhm @ 2A, 10V,

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BSL207SPH6327XTSA1
Infineon Technologies

BSL207SPH6327XTSA1

Sehemu ya hisa.: 128196

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 41 mOhm @ 6A, 4.5V,

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BSL606SNH6327XTSA1
Infineon Technologies

BSL606SNH6327XTSA1

Sehemu ya hisa.: 124505

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.5A, 10V,

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BSZ340N08NS3GATMA1
Infineon Technologies

BSZ340N08NS3GATMA1

Sehemu ya hisa.: 7427

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), 23A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 34 mOhm @ 12A, 10V,

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BSL202SNH6327XTSA1
Infineon Technologies

BSL202SNH6327XTSA1

Sehemu ya hisa.: 109229

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 4.5V,

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BSC0909NSATMA1
Infineon Technologies

BSC0909NSATMA1

Sehemu ya hisa.: 174435

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 34V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), 44A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 20A, 10V,

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BSL303SPEH6327XTSA1
Infineon Technologies

BSL303SPEH6327XTSA1

Sehemu ya hisa.: 185383

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.3A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 6.3A, 10V,

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BSC120N03MSGATMA1
Infineon Technologies

BSC120N03MSGATMA1

Sehemu ya hisa.: 174610

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Ta), 39A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V,

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BSL802SNH6327XTSA1
Infineon Technologies

BSL802SNH6327XTSA1

Sehemu ya hisa.: 143319

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 2.5V, Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 2.5V,

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BSL302SNH6327XTSA1
Infineon Technologies

BSL302SNH6327XTSA1

Sehemu ya hisa.: 181075

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.1A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V,

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