Transistors - FETs, MOSFETs - Moja

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Transistors - FETs, MOSFETs - Moja

IPB147N03LGATMA1

Infineon Technologies

IPB147N03LGATMA1

Sehemu ya hisa.: 800

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V,

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SPW07N60CFDFKSA1

Infineon Technologies

SPW07N60CFDFKSA1

Sehemu ya hisa.: 796

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 700 mOhm @ 4.6A, 10V,

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Infineon Technologies

IRLR8729TRPBF

Sehemu ya hisa.: 140819

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 58A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 25A, 10V,

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IPI80N04S306AKSA1

Infineon Technologies

IPI80N04S306AKSA1

Sehemu ya hisa.: 784

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 80A, 10V,

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Infineon Technologies

IRFSL4615PBF

Sehemu ya hisa.: 777

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 33A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V,

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Infineon Technologies

SPS02N60C3

Sehemu ya hisa.: 778

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V,

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Infineon Technologies

IRF8788TRPBF

Sehemu ya hisa.: 136642

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 24A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 24A, 10V,

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Infineon Technologies

IRF7805TRPBF

Sehemu ya hisa.: 141172

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V,

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IPI100N08N3GHKSA1

Infineon Technologies

IPI100N08N3GHKSA1

Sehemu ya hisa.: 756

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V,

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IRF6718L2TR1PBF

Infineon Technologies

IRF6718L2TR1PBF

Sehemu ya hisa.: 867

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 61A (Ta), 270A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 0.7 mOhm @ 61A, 10V,

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Infineon Technologies

IPI08CN10N G

Sehemu ya hisa.: 830

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 95A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 95A, 10V,

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Infineon Technologies

IRLS3036PBF

Sehemu ya hisa.: 817

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 195A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V,

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IPS075N03LGAKMA1

Infineon Technologies

IPS075N03LGAKMA1

Sehemu ya hisa.: 811

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V,

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Infineon Technologies

IPI16CN10N G

Sehemu ya hisa.: 759

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 53A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 53A, 10V,

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Infineon Technologies

IPI12CN10N G

Sehemu ya hisa.: 834

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 67A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V,

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Infineon Technologies

IPB06CN10N G

Sehemu ya hisa.: 759

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 100A, 10V,

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Infineon Technologies

IRLS3034PBF

Sehemu ya hisa.: 14565

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 195A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V,

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SPP15N65C3HKSA1

Infineon Technologies

SPP15N65C3HKSA1

Sehemu ya hisa.: 838

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V,

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IPP80N06S2L09AKSA1

Infineon Technologies

IPP80N06S2L09AKSA1

Sehemu ya hisa.: 815

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 52A, 10V,

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IPB26CN10NGATMA1

Infineon Technologies

IPB26CN10NGATMA1

Sehemu ya hisa.: 794

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V,

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IPA60R520CPXKSA1

Infineon Technologies

IPA60R520CPXKSA1

Sehemu ya hisa.: 816

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V,

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Infineon Technologies

IRFS4115PBF

Sehemu ya hisa.: 15359

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 195A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 12.1 mOhm @ 62A, 10V,

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Infineon Technologies

IRLSL3034PBF

Sehemu ya hisa.: 826

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 195A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V,

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IPP47N10SL26AKSA1

Infineon Technologies

IPP47N10SL26AKSA1

Sehemu ya hisa.: 795

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 47A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V,

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Infineon Technologies

IRFH8202TRPBF

Sehemu ya hisa.: 97443

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 47A (Ta), 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 50A, 10V,

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IPA50R399CPXKSA1

Infineon Technologies

IPA50R399CPXKSA1

Sehemu ya hisa.: 64746

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 399 mOhm @ 4.9A, 10V,

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Infineon Technologies

IRFS3107PBF

Sehemu ya hisa.: 11356

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 195A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 mOhm @ 140A, 10V,

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Infineon Technologies

IPI070N08N3 G

Sehemu ya hisa.: 785

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 73A, 10V,

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Infineon Technologies

IRF9321TRPBF

Sehemu ya hisa.: 158648

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 15A, 10V,

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IPI90R1K0C3XKSA1

Infineon Technologies

IPI90R1K0C3XKSA1

Sehemu ya hisa.: 754

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V,

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Infineon Technologies

IRF9335TRPBF

Sehemu ya hisa.: 114872

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 59 mOhm @ 5.4A, 10V,

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IPW90R1K2C3FKSA1

Infineon Technologies

IPW90R1K2C3FKSA1

Sehemu ya hisa.: 795

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.1A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V,

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Infineon Technologies

IRF60B217

Sehemu ya hisa.: 39192

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 9 mOhm @ 36A, 10V,

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IPS12CN10LGBKMA1

Infineon Technologies

IPS12CN10LGBKMA1

Sehemu ya hisa.: 824

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 69A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11.8 mOhm @ 69A, 10V,

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IPI60R520CPAKSA1

Infineon Technologies

IPI60R520CPAKSA1

Sehemu ya hisa.: 786

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V,

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IPB80N06S2L06ATMA1

Infineon Technologies

IPB80N06S2L06ATMA1

Sehemu ya hisa.: 781

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 69A, 10V,

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3600

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