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PMIC - Madereva wa Lango

IR2131STRPBF
Infineon Technologies

IR2131STRPBF

Sehemu ya hisa.: 15429

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.2V,

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IR2153D
Infineon Technologies

IR2153D

Sehemu ya hisa.: 8080

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: N-Channel MOSFET, Voltage - Ugavi: 10V ~ 15.6V,

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IR21362JTR
Infineon Technologies

IR21362JTR

Sehemu ya hisa.: 990

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 11.5V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 3V,

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IR2128STR
Infineon Technologies

IR2128STR

Sehemu ya hisa.: 8131

Usanidi Unaoendeshwa: High-Side or Low-Side, Aina ya Kituo: Single, Idadi ya Madereva: 1, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 12V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 3V,

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IR2102
Infineon Technologies

IR2102

Sehemu ya hisa.: 8050

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 3V,

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IR21531STR
Infineon Technologies

IR21531STR

Sehemu ya hisa.: 579

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: N-Channel MOSFET, Voltage - Ugavi: 10V ~ 15.6V,

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IR2132JTR
Infineon Technologies

IR2132JTR

Sehemu ya hisa.: 595

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.2V,

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IR2117
Infineon Technologies

IR2117

Sehemu ya hisa.: 8011

Usanidi Unaoendeshwa: High-Side, Aina ya Kituo: Single, Idadi ya Madereva: 1, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 6V, 9.5V,

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IR2110
Infineon Technologies

IR2110

Sehemu ya hisa.: 9870

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 3.3V ~ 20V, Voltage ya mantiki - VIL, VIH: 6V, 9.5V,

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IRS21844PBF
Infineon Technologies

IRS21844PBF

Sehemu ya hisa.: 25609

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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IR2233J
Infineon Technologies

IR2233J

Sehemu ya hisa.: 9887

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2V,

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IR2130JPBF
Infineon Technologies

IR2130JPBF

Sehemu ya hisa.: 6257

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.2V,

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IR21834
Infineon Technologies

IR21834

Sehemu ya hisa.: 820

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.7V,

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IRS2334SPBF
Infineon Technologies

IRS2334SPBF

Sehemu ya hisa.: 25731

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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IR21364SPBF
Infineon Technologies

IR21364SPBF

Sehemu ya hisa.: 21474

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 11.5V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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IR2133SPBF
Infineon Technologies

IR2133SPBF

Sehemu ya hisa.: 11251

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.2V,

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IR2183PBF
Infineon Technologies

IR2183PBF

Sehemu ya hisa.: 20899

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.7V,

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IR21362STRPBF
Infineon Technologies

IR21362STRPBF

Sehemu ya hisa.: 2610

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 11.5V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 3V,

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IR2135JPBF
Infineon Technologies

IR2135JPBF

Sehemu ya hisa.: 8029

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.2V,

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IRS2453DPBF
Infineon Technologies

IRS2453DPBF

Sehemu ya hisa.: 19690

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 4, Aina ya Lango: N-Channel MOSFET, Voltage - Ugavi: 10V ~ 15.6V, Voltage ya mantiki - VIL, VIH: 4.7V, 9.3V,

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IR2105
Infineon Technologies

IR2105

Sehemu ya hisa.: 491

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Synchronous, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 3V,

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IR21824
Infineon Technologies

IR21824

Sehemu ya hisa.: 666

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.7V,

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IR2131JTRPBF
Infineon Technologies

IR2131JTRPBF

Sehemu ya hisa.: 13149

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.2V,

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IR2010SPBF
Infineon Technologies

IR2010SPBF

Sehemu ya hisa.: 23041

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 6V, 9.5V,

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IRS23364DSPBF
Infineon Technologies

IRS23364DSPBF

Sehemu ya hisa.: 25818

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 11.5V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.5V,

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IR2136
Infineon Technologies

IR2136

Sehemu ya hisa.: 9903

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 3V,

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IR2133STR
Infineon Technologies

IR2133STR

Sehemu ya hisa.: 591

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.2V,

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IR21814PBF
Infineon Technologies

IR21814PBF

Sehemu ya hisa.: 21181

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.7V,

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IR21084STR
Infineon Technologies

IR21084STR

Sehemu ya hisa.: 954

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.9V,

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IR2136JTRPBF
Infineon Technologies

IR2136JTRPBF

Sehemu ya hisa.: 26760

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 3V,

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IR2132S
Infineon Technologies

IR2132S

Sehemu ya hisa.: 220

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.2V,

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IR2181S
Infineon Technologies

IR2181S

Sehemu ya hisa.: 952

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.7V,

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IR2101
Infineon Technologies

IR2101

Sehemu ya hisa.: 9817

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 3V,

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IR2132PBF
Infineon Technologies

IR2132PBF

Sehemu ya hisa.: 10949

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2.2V,

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IR2233JPBF
Infineon Technologies

IR2233JPBF

Sehemu ya hisa.: 4925

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: 3-Phase, Idadi ya Madereva: 6, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 0.8V, 2V,

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IRS2110PBF
Infineon Technologies

IRS2110PBF

Sehemu ya hisa.: 25095

Usanidi Unaoendeshwa: Half-Bridge, Aina ya Kituo: Independent, Idadi ya Madereva: 2, Aina ya Lango: IGBT, N-Channel MOSFET, Voltage - Ugavi: 10V ~ 20V, Voltage ya mantiki - VIL, VIH: 6V, 9.5V,

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