Transistors - FETs, MOSFETs - Moja

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Transistors - FETs, MOSFETs - Moja

IXTQ74N20P

Sehemu ya hisa.: 15744

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 74A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 34 mOhm @ 37A, 10V,

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IXFP8N85X

Sehemu ya hisa.: 42921

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 850V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V,

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IXTA230N075T2-7

IXTA230N075T2-7

Sehemu ya hisa.: 14892

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 230A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V,

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IXFX520N075T2

Sehemu ya hisa.: 6716

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 520A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 100A, 10V,

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IXFA230N075T2

Sehemu ya hisa.: 18123

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 230A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V,

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IXTP20N65X

Sehemu ya hisa.: 9894

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 210 mOhm @ 10A, 10V,

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IXFT30N60P

Sehemu ya hisa.: 10112

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 240 mOhm @ 15A, 10V,

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IXFX32N80P

Sehemu ya hisa.: 7126

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 32A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V,

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IXFH46N65X2

Sehemu ya hisa.: 9194

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 46A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 76 mOhm @ 23A, 10V,

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IXTR90P10P

Sehemu ya hisa.: 7107

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 57A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 27 mOhm @ 45A, 10V,

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IXFA10N80P

Sehemu ya hisa.: 26241

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 5A, 10V,

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IXTT96N15P

Sehemu ya hisa.: 13099

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 96A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V,

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IXFH10N100P

Sehemu ya hisa.: 13065

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 5A, 10V,

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IXFA7N100P

Sehemu ya hisa.: 16441

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V,

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IXFP102N15T

Sehemu ya hisa.: 16897

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 102A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V,

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IXFQ72N20X3

Sehemu ya hisa.: 218

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 72A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 20 mOhm @ 36A, 10V,

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IXTA62N15P

Sehemu ya hisa.: 23940

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 62A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V,

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IXFN90N30

Sehemu ya hisa.: 2562

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V,

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IXFL100N50P

Sehemu ya hisa.: 3541

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 52 mOhm @ 50A, 10V,

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IXFP110N15T2

Sehemu ya hisa.: 25389

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 150V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 110A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 55A, 10V,

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IXFH96N20P

Sehemu ya hisa.: 12134

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 96A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V,

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IXFH94N30P3

Sehemu ya hisa.: 6837

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 94A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 36 mOhm @ 47A, 10V,

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IXTP1R4N100P

Sehemu ya hisa.: 34060

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V,

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IXFN102N30P

Sehemu ya hisa.: 3698

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 88A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V,

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IXTK32P60P

Sehemu ya hisa.: 4880

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 32A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 350 mOhm @ 16A, 10V,

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IXTP1R6N100D2

Sehemu ya hisa.: 36008

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 10 Ohm @ 800mA, 0V,

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IXFH18N60X

Sehemu ya hisa.: 11341

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 230 mOhm @ 9A, 10V,

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IXFA230N075T2-7

IXFA230N075T2-7

Sehemu ya hisa.: 17296

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 230A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 50A, 10V,

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IXTP05N100M

Sehemu ya hisa.: 28393

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 700mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 17 Ohm @ 375mA, 10V,

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IXTT50P10

Sehemu ya hisa.: 9450

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 55 mOhm @ 25A, 10V,

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IXFY8N65X2

Sehemu ya hisa.: 176

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 450 mOhm @ 4A, 10V,

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IXTT24P20

Sehemu ya hisa.: 9051

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 24A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V,

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IXFK88N30P

Sehemu ya hisa.: 6789

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 88A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 40 mOhm @ 44A, 10V,

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IXTP260N055T2

Sehemu ya hisa.: 16656

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 260A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V,

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IXFN32N100P

Sehemu ya hisa.: 2878

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 27A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 320 mOhm @ 16A, 10V,

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IXTP8N65X2M

Sehemu ya hisa.: 36069

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V,

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2148

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