Transistors - FETs, MOSFETs - Moja

LSIC1MO120E0080

LSIC1MO120E0080

Sehemu ya hisa.: 1259

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 39A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V,

Wishlist.
LSIC1MO120E0160

LSIC1MO120E0160

Sehemu ya hisa.: 1034

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 10A, 20V,

Wishlist.
LSIC1MO120E0120

LSIC1MO120E0120

Sehemu ya hisa.: 1693

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 27A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 20V,

Wishlist.