Transistors - FETs, MOSFETs - Moja | Bidhaa tofauti za semiconductor | 17

APT94N65B2C3G

Sehemu ya hisa.: 2836

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 94A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 35 mOhm @ 47A, 10V,

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Microsemi Corporation

APT56F50L

Sehemu ya hisa.: 5777

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 56A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V,

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Microsemi Corporation

APT47N60SC3G

Sehemu ya hisa.: 4573

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 47A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 30A, 10V,

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Microsemi Corporation

APT75F50L

Sehemu ya hisa.: 4645

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 75 mOhm @ 37A, 10V,

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Microsemi Corporation

APT5014SLLG

Sehemu ya hisa.: 4766

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 140 mOhm @ 17.5A, 10V,

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Microsemi Corporation

APT77N60SC6

Sehemu ya hisa.: 5369

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 77A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 41 mOhm @ 44.4A, 10V,

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Microsemi Corporation

APT18M100B

Sehemu ya hisa.: 5829

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 700 mOhm @ 9A, 10V,

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Microsemi Corporation

APT60N60SCSG

Sehemu ya hisa.: 3860

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V,

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Microsemi Corporation

APT24M120B2

Sehemu ya hisa.: 3339

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 24A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 630 mOhm @ 12A, 10V,

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Microsemi Corporation

APT50M65B2FLLG

Sehemu ya hisa.: 2432

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 67A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 33.5A, 10V,

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Microsemi Corporation

APT97N65LC6

Sehemu ya hisa.: 4181

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 97A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 41 mOhm @ 48.5A, 10V,

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Microsemi Corporation

APT60N60SCSG/TR

Sehemu ya hisa.: 4282

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V,

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Microsemi Corporation

APT5010LFLLG

Sehemu ya hisa.: 3668

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 46A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 100 mOhm @ 23A, 10V,

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Microsemi Corporation

APT7F100B

Sehemu ya hisa.: 14329

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 4A, 10V,

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Microsemi Corporation

APT31M100L

Sehemu ya hisa.: 3514

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 32A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 400 mOhm @ 16A, 10V,

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Microsemi Corporation

APT20M11JVFR

Sehemu ya hisa.: 1179

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 175A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V,

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Microsemi Corporation

APT48M80B2

Sehemu ya hisa.: 3827

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 49A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 190 mOhm @ 24A, 10V,

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Microsemi Corporation

APT43F60L

Sehemu ya hisa.: 5823

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 45A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V,

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Microsemi Corporation

APT41M80B2

Sehemu ya hisa.: 4297

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 43A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 210 mOhm @ 20A, 10V,

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Microsemi Corporation

APT24M80B

Sehemu ya hisa.: 7041

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V,

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Microsemi Corporation

APT37M100B2

Sehemu ya hisa.: 3169

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 37A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V,

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Microsemi Corporation

APT50M65JLL

Sehemu ya hisa.: 1725

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 58A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 65 mOhm @ 29A, 10V,

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Microsemi Corporation

APT24M80S

Sehemu ya hisa.: 6715

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V,

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Microsemi Corporation

APT60M60JLL

Sehemu ya hisa.: 1068

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 35A, 10V,

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Microsemi Corporation

APT60M75JLL

Sehemu ya hisa.: 1424

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 58A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 75 mOhm @ 29A, 10V,

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Microsemi Corporation

APT22F80B

Sehemu ya hisa.: 5763

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V,

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Microsemi Corporation

APT30M85BVRG

Sehemu ya hisa.: 6724

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V,

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Microsemi Corporation

APT20M45BVRG

Sehemu ya hisa.: 6962

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 56A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 45 mOhm @ 500mA, 10V,

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Microsemi Corporation

APT12057B2LLG

Sehemu ya hisa.: 2170

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V,

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Microsemi Corporation

APT8020B2LLG

Sehemu ya hisa.: 2093

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 800V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 38A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 19A, 10V,

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Microsemi Corporation

APT20M38BVRG

Sehemu ya hisa.: 5637

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 67A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 38 mOhm @ 500mA, 10V,

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Microsemi Corporation

APT20M22LVRG

Sehemu ya hisa.: 3768

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V,

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Microsemi Corporation

APT30M40JVR

Sehemu ya hisa.: 2354

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 300V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V,

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Microsemi Corporation

APT60M75JVR

Sehemu ya hisa.: 1241

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 62A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 75 mOhm @ 500mA, 10V,

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Microsemi Corporation

APT20M38SVRG/TR

Sehemu ya hisa.: 6459

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 67A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 38 mOhm @ 33.5A, 10V,

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Microsemi Corporation

APT10078SLLG

Sehemu ya hisa.: 3377

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 780 mOhm @ 7A, 10V,

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