Transistors - FETs, MOSFETs - Moja

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Transistors - FETs, MOSFETs - Moja

Nexperia USA Inc.

PMPB11EN,115

Sehemu ya hisa.: 158882

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9A, 10V,

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Nexperia USA Inc.

PMV20ENR

Sehemu ya hisa.: 101871

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 21 mOhm @ 6A, 10V,

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PSMN4R0-40YS,115

Nexperia USA Inc.

PSMN4R0-40YS,115

Sehemu ya hisa.: 189736

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 15A, 10V,

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Nexperia USA Inc.

NX7002AK,215

Sehemu ya hisa.: 157756

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 190mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V,

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Nexperia USA Inc.

PSMN7R5-30YLDX

Sehemu ya hisa.: 150066

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 51A (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V,

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PSMN022-30PL,127

Nexperia USA Inc.

PSMN022-30PL,127

Sehemu ya hisa.: 89373

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V,

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Nexperia USA Inc.

PMV20XNER

Sehemu ya hisa.: 125462

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.8V, 4.5V, Rds On (Max) @ Id, Vgs: 23 mOhm @ 5.7A, 4.5V,

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Nexperia USA Inc.

PMN30XPX

Sehemu ya hisa.: 125076

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 34 mOhm @ 5.2A, 4.5V,

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Nexperia USA Inc.

PSMN7R5-60YLX

Sehemu ya hisa.: 115986

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 86A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V,

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Nexperia USA Inc.

PMZB200UNEYL

Sehemu ya hisa.: 132087

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.4A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.4A, 4.5V,

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Nexperia USA Inc.

PMV37EN2R

Sehemu ya hisa.: 129683

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 36 mOhm @ 4.5A, 10V,

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Nexperia USA Inc.

PMN30UNX

Sehemu ya hisa.: 174306

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.5V, 4.5V, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 4.5V,

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Nexperia USA Inc.

PSMN011-60MLX

Sehemu ya hisa.: 102869

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 61A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 15A, 10V,

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Nexperia USA Inc.

PMV30UN2R

Sehemu ya hisa.: 149382

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 1.2V, 4.5V, Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.2A, 4.5V,

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PSMN7R0-60YS,115

Nexperia USA Inc.

PSMN7R0-60YS,115

Sehemu ya hisa.: 153050

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 89A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 15A, 10V,

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PSMN4R3-80ES,127

Nexperia USA Inc.

PSMN4R3-80ES,127

Sehemu ya hisa.: 22139

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V,

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PSMN069-100YS,115

Nexperia USA Inc.

PSMN069-100YS,115

Sehemu ya hisa.: 174065

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 72.4 mOhm @ 5A, 10V,

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Nexperia USA Inc.

PSMNR70-30YLHX

Sehemu ya hisa.: 7882

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 300A,

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Nexperia USA Inc.

PSMN2R0-60PSRQ

Sehemu ya hisa.: 64148

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V,

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Nexperia USA Inc.

PSMN1R5-30BLEJ

Sehemu ya hisa.: 44079

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 25A, 10V,

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Nexperia USA Inc.

PSMN0R7-25YLDX

Sehemu ya hisa.: 77746

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 300A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 0.72 mOhm @ 25A, 10V,

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PSMN4R8-100BSEJ

Nexperia USA Inc.

PSMN4R8-100BSEJ

Sehemu ya hisa.: 44113

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 25A, 10V,

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PSMN004-60B,118

Nexperia USA Inc.

PSMN004-60B,118

Sehemu ya hisa.: 42979

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V,

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PSMN1R8-30BL,118

Nexperia USA Inc.

PSMN1R8-30BL,118

Sehemu ya hisa.: 57853

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 25A, 10V,

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PSMN4R4-80BS,118

Nexperia USA Inc.

PSMN4R4-80BS,118

Sehemu ya hisa.: 46350

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V,

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PSMN4R6-60BS,118

Nexperia USA Inc.

PSMN4R6-60BS,118

Sehemu ya hisa.: 74651

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 25A, 10V,

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PSMN2R6-40YS,115

Nexperia USA Inc.

PSMN2R6-40YS,115

Sehemu ya hisa.: 147546

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V,

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PSMN8R5-100ESFQ

Nexperia USA Inc.

PSMN8R5-100ESFQ

Sehemu ya hisa.: 82052

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 97A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 7V, 10V, Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 25A, 10V,

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PSMN3R5-80ES,127

Nexperia USA Inc.

PSMN3R5-80ES,127

Sehemu ya hisa.: 45689

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V,

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Nexperia USA Inc.

PSMN1R0-40YLDX

Sehemu ya hisa.: 76378

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 25A, 10V,

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Nexperia USA Inc.

NX3020NAK,215

Sehemu ya hisa.: 113818

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 10V, Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V,

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PSMN2R8-25MLC,115

Nexperia USA Inc.

PSMN2R8-25MLC,115

Sehemu ya hisa.: 193042

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 70A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V,

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Nexperia USA Inc.

PSMN2R1-40PLQ

Sehemu ya hisa.: 73170

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 150A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V,

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PSMN017-30PL,127

Nexperia USA Inc.

PSMN017-30PL,127

Sehemu ya hisa.: 74775

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 32A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V,

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PSMN1R7-60BS,118

Nexperia USA Inc.

PSMN1R7-60BS,118

Sehemu ya hisa.: 44392

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2 mOhm @ 25A, 10V,

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PSMN009-100P,127

Nexperia USA Inc.

PSMN009-100P,127

Sehemu ya hisa.: 56916

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 25A, 10V,

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