Transistors - FETs, MOSFETs - Moja

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Transistors - FETs, MOSFETs - Moja

BUK761R7-40E,118

Nexperia USA Inc.

BUK761R7-40E,118

Sehemu ya hisa.: 64866

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK7880-55/CUF

Sehemu ya hisa.: 137946

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 80 mOhm @ 5A, 10V,

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BUK7107-55ATE,118

Nexperia USA Inc.

BUK7107-55ATE,118

Sehemu ya hisa.: 8606

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 50A, 10V,

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BUK661R6-30C,118

Nexperia USA Inc.

BUK661R6-30C,118

Sehemu ya hisa.: 63697

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V,

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BUK9628-55A,118

Nexperia USA Inc.

BUK9628-55A,118

Sehemu ya hisa.: 154200

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 42A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 5V, Rds On (Max) @ Id, Vgs: 25 mOhm @ 15A, 10V,

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Nexperia USA Inc.

BUK6D43-60EX

Sehemu ya hisa.: 24356

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 43 mOhm @ 5A, 10V,

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BUK7Y18-75B,115

Nexperia USA Inc.

BUK7Y18-75B,115

Sehemu ya hisa.: 197618

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 49A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V,

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Nexperia USA Inc.

BUK6D120-60PX

Sehemu ya hisa.: 24343

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), 8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 3A, 10V,

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Nexperia USA Inc.

BUK9840-55/CUX

Sehemu ya hisa.: 139579

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), 10.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 5V,

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BUK9Y104-100B,115

Nexperia USA Inc.

BUK9Y104-100B,115

Sehemu ya hisa.: 164195

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14.8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 99 mOhm @ 5A, 10V,

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Nexperia USA Inc.

BUK9M14-40EX

Sehemu ya hisa.: 179377

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 44A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V,

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BUK964R8-60E,118

Nexperia USA Inc.

BUK964R8-60E,118

Sehemu ya hisa.: 72266

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 25A, 10V,

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BUK765R0-100E,118

Nexperia USA Inc.

BUK765R0-100E,118

Sehemu ya hisa.: 47693

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V,

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BUK6610-75C,118

Nexperia USA Inc.

BUK6610-75C,118

Sehemu ya hisa.: 112806

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 78A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V,

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BUK763R9-60E,118

Nexperia USA Inc.

BUK763R9-60E,118

Sehemu ya hisa.: 64641

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 25A, 10V,

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BUK9230-100B,118

Nexperia USA Inc.

BUK9230-100B,118

Sehemu ya hisa.: 59587

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 47A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 28 mOhm @ 25A, 10V,

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BUK9275-100A,118

Nexperia USA Inc.

BUK9275-100A,118

Sehemu ya hisa.: 172654

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 21.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 72 mOhm @ 10A, 10V,

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BUK6217-55C,118

Nexperia USA Inc.

BUK6217-55C,118

Sehemu ya hisa.: 159020

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 44A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 19 mOhm @ 12A, 10V,

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BUK7219-55A,118

Nexperia USA Inc.

BUK7219-55A,118

Sehemu ya hisa.: 184579

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 55A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 19 mOhm @ 25A, 10V,

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BUK9215-55A,118

Nexperia USA Inc.

BUK9215-55A,118

Sehemu ya hisa.: 184578

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 55A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 25A, 10V,

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BUK9240-100A,118

Nexperia USA Inc.

BUK9240-100A,118

Sehemu ya hisa.: 151749

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 33A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 38.6 mOhm @ 25A, 10V,

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BUK9207-30B,118

Nexperia USA Inc.

BUK9207-30B,118

Sehemu ya hisa.: 152477

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V,

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BUK6209-30C,118

Nexperia USA Inc.

BUK6209-30C,118

Sehemu ya hisa.: 102855

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 12A, 10V,

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BUK96180-100A,118

Nexperia USA Inc.

BUK96180-100A,118

Sehemu ya hisa.: 147944

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 173 mOhm @ 5A, 10V,

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BUK9614-60E,118

Nexperia USA Inc.

BUK9614-60E,118

Sehemu ya hisa.: 122604

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 56A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 15A, 10V,

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Nexperia USA Inc.

BUK7Y4R4-40EX

Sehemu ya hisa.: 176281

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 25A, 10V,

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Nexperia USA Inc.

BUK7Y7R8-80EX

Sehemu ya hisa.: 118582

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 25A, 10V,

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BUK9Y6R0-60E,115

Nexperia USA Inc.

BUK9Y6R0-60E,115

Sehemu ya hisa.: 141695

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 25A, 10V,

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BUK7E2R6-60E,127

Nexperia USA Inc.

BUK7E2R6-60E,127

Sehemu ya hisa.: 29265

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V,

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BUK9Y19-75B,115

Nexperia USA Inc.

BUK9Y19-75B,115

Sehemu ya hisa.: 140943

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 48.2A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V,

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BUK765R3-40E,118

Nexperia USA Inc.

BUK765R3-40E,118

Sehemu ya hisa.: 141625

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 25A, 10V,

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BUK9209-40B,118

Nexperia USA Inc.

BUK9209-40B,118

Sehemu ya hisa.: 149318

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V,

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BUK7210-55B,118

Nexperia USA Inc.

BUK7210-55B,118

Sehemu ya hisa.: 152495

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 75A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V,

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BUK9219-55A,118

Nexperia USA Inc.

BUK9219-55A,118

Sehemu ya hisa.: 172078

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 55A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 25A, 10V,

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BUK7222-55A,118

Nexperia USA Inc.

BUK7222-55A,118

Sehemu ya hisa.: 187022

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 55V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 48A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 22 mOhm @ 25A, 10V,

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BUK663R2-40C,118

Nexperia USA Inc.

BUK663R2-40C,118

Sehemu ya hisa.: 91480

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V,

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