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Transistors - FETs, MOSFETs - Moja

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  • Transistors - FETs, MOSFETs - Moja
2SK3746
ON Semiconductor

2SK3746

Sehemu ya hisa.: 1143

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

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2SK3747
ON Semiconductor

2SK3747

Sehemu ya hisa.: 1187

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

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2SK3704
ON Semiconductor

2SK3704

Sehemu ya hisa.: 1118

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 45A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 14 mOhm @ 23A, 10V,

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2SK3745LS
ON Semiconductor

2SK3745LS

Sehemu ya hisa.: 1162

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V,

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2SK3703
ON Semiconductor

2SK3703

Sehemu ya hisa.: 6201

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 26 mOhm @ 15A, 10V,

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2SJ652-RA11
ON Semiconductor

2SJ652-RA11

Sehemu ya hisa.: 1181

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 38 mOhm @ 14A, 10V,

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2SK4125
ON Semiconductor

2SK4125

Sehemu ya hisa.: 829

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 610 mOhm @ 7A, 10V,

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2SJ656
ON Semiconductor

2SJ656

Sehemu ya hisa.: 835

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 18A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 75.5 mOhm @ 9A, 10V,

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2SK4124
ON Semiconductor

2SK4124

Sehemu ya hisa.: 818

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V,

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2SK4171
ON Semiconductor

2SK4171

Sehemu ya hisa.: 814

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 50A, 10V,

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2SK4085LS
ON Semiconductor

2SK4085LS

Sehemu ya hisa.: 852

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 430 mOhm @ 8A, 10V,

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2SK3708
ON Semiconductor

2SK3708

Sehemu ya hisa.: 838

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 15A, 10V,

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2SK3707
ON Semiconductor

2SK3707

Sehemu ya hisa.: 828

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V,

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2N7002WT3G
ON Semiconductor

2N7002WT3G

Sehemu ya hisa.: 457

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 310mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V,

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2N7002ET3G
ON Semiconductor

2N7002ET3G

Sehemu ya hisa.: 516

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 260mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V,

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2N7002LT3
ON Semiconductor

2N7002LT3

Sehemu ya hisa.: 327

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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2N7000RLRPG
ON Semiconductor

2N7000RLRPG

Sehemu ya hisa.: 6095

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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2N7000G
ON Semiconductor

2N7000G

Sehemu ya hisa.: 240

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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2N7002_S00Z
ON Semiconductor

2N7002_S00Z

Sehemu ya hisa.: 9843

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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2N7002_L99Z
ON Semiconductor

2N7002_L99Z

Sehemu ya hisa.: 9813

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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2N7000-D74Z
ON Semiconductor

2N7000-D74Z

Sehemu ya hisa.: 16226

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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2SJ665-DL-1EX
ON Semiconductor

2SJ665-DL-1EX

Sehemu ya hisa.: 5669

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 27A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 77 mOhm @ 14A, 10V,

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2SK4196LS-1E
ON Semiconductor

2SK4196LS-1E

Sehemu ya hisa.: 9506

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.56 Ohm @ 2.8A, 10V,

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2SK3821-E
ON Semiconductor

2SK3821-E

Sehemu ya hisa.: 9493

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 33 mOhm @ 20A, 10V,

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2SK4210
ON Semiconductor

2SK4210

Sehemu ya hisa.: 9418

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 5A, 10V,

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2SK4088LS
ON Semiconductor

2SK4088LS

Sehemu ya hisa.: 9450

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 650V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 850 mOhm @ 5.5A, 10V,

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2SJ652
ON Semiconductor

2SJ652

Sehemu ya hisa.: 5963

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 38 mOhm @ 14A, 10V,

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2SK4065-E
ON Semiconductor

2SK4065-E

Sehemu ya hisa.: 9480

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 75V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4V, 10V, Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V,

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2N7008
ON Semiconductor

2N7008

Sehemu ya hisa.: 9463

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 150mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V,

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2N7000RLRA
ON Semiconductor

2N7000RLRA

Sehemu ya hisa.: 9338

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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2N7002LT1
ON Semiconductor

2N7002LT1

Sehemu ya hisa.: 9349

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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2N7002_NB9G002
ON Semiconductor

2N7002_NB9G002

Sehemu ya hisa.: 9327

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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2N7002KT3G
ON Semiconductor

2N7002KT3G

Sehemu ya hisa.: 9323

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 320mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V,

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2N7000RLRMG
ON Semiconductor

2N7000RLRMG

Sehemu ya hisa.: 9288

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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2N7000RLRAG
ON Semiconductor

2N7000RLRAG

Sehemu ya hisa.: 6006

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

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2N7002T
ON Semiconductor

2N7002T

Sehemu ya hisa.: 172686

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V,

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