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Transistors - FETs, MOSFETs - Moja

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  • Transistors - FETs, MOSFETs - Moja
FQU5N40TU
ON Semiconductor

FQU5N40TU

Sehemu ya hisa.: 69173

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 1.7A, 10V,

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NDFP03N150CG
ON Semiconductor

NDFP03N150CG

Sehemu ya hisa.: 27687

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 1500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 10.5 Ohm @ 1A, 10V,

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NTD5865N-1G
ON Semiconductor

NTD5865N-1G

Sehemu ya hisa.: 944

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 43A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V,

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FQI27N25TU-F085
ON Semiconductor

FQI27N25TU-F085

Sehemu ya hisa.: 976

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 250V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 110 mOhm @ 12.75A, 10V,

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NTMFS4921NT3G
ON Semiconductor

NTMFS4921NT3G

Sehemu ya hisa.: 907

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.8A (Ta), 58.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 11.5V, Rds On (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V,

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FQB1P50TM
ON Semiconductor

FQB1P50TM

Sehemu ya hisa.: 52214

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 10.5 Ohm @ 750mA, 10V,

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FDB13AN06A0
ON Semiconductor

FDB13AN06A0

Sehemu ya hisa.: 65817

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10.9A (Ta), 62A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 62A, 10V,

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NTD4905NT4G
ON Semiconductor

NTD4905NT4G

Sehemu ya hisa.: 6164

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), 67A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 30A, 10V,

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NDF10N62ZG
ON Semiconductor

NDF10N62ZG

Sehemu ya hisa.: 6123

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 620V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V,

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NTD4857NA-1G
ON Semiconductor

NTD4857NA-1G

Sehemu ya hisa.: 921

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), 78A (Tc), Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 30A, 10V,

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FQP17P06
ON Semiconductor

FQP17P06

Sehemu ya hisa.: 62600

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 120 mOhm @ 8.5A, 10V,

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NTTFS5820NLTWG
ON Semiconductor

NTTFS5820NLTWG

Sehemu ya hisa.: 937

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Ta), 37A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.7A, 10V,

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NTD4963NT4G
ON Semiconductor

NTD4963NT4G

Sehemu ya hisa.: 997

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.1A (Ta), 44A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 30A, 10V,

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FDMS2508SDC
ON Semiconductor

FDMS2508SDC

Sehemu ya hisa.: 6180

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 34A (Ta), 49A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.95 mOhm @ 28A, 10V,

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NTTFS4943NTAG
ON Semiconductor

NTTFS4943NTAG

Sehemu ya hisa.: 873

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Ta), 41A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 20A, 10V,

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NDD03N50ZT4G
ON Semiconductor

NDD03N50ZT4G

Sehemu ya hisa.: 977

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.6A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V,

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NTB6412ANT4G
ON Semiconductor

NTB6412ANT4G

Sehemu ya hisa.: 6104

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 58A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 18.2 mOhm @ 58A, 10V,

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NTTFS4840NTWG
ON Semiconductor

NTTFS4840NTWG

Sehemu ya hisa.: 905

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.6A (Ta), 26A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 11.5V, Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V,

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NDF08N50ZG
ON Semiconductor

NDF08N50ZG

Sehemu ya hisa.: 6127

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.6A, 10V,

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NTTFS5811NLTAG
ON Semiconductor

NTTFS5811NLTAG

Sehemu ya hisa.: 947

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Ta), 53A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 20A, 10V,

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NTLJS4149PTBG
ON Semiconductor

NTLJS4149PTBG

Sehemu ya hisa.: 831

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.7A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.5A, 4.5V,

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NTMS4935NR2G
ON Semiconductor

NTMS4935NR2G

Sehemu ya hisa.: 907

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 7.5A, 10V,

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NTTFS4800NTAG
ON Semiconductor

NTTFS4800NTAG

Sehemu ya hisa.: 1012

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), 32A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 11.5V, Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V,

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NDF04N62ZG
ON Semiconductor

NDF04N62ZG

Sehemu ya hisa.: 1011

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 620V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.4A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V,

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NTD4959NH-1G
ON Semiconductor

NTD4959NH-1G

Sehemu ya hisa.: 950

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Ta), 58A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 11.5V, Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V,

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FDMS2506SDC
ON Semiconductor

FDMS2506SDC

Sehemu ya hisa.: 1013

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 39A (Ta), 49A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 30A, 10V,

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NTMFS4897NFT3G
ON Semiconductor

NTMFS4897NFT3G

Sehemu ya hisa.: 954

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 17A (Ta), 171A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2 mOhm @ 22A, 10V,

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NDD02N60Z-1G
ON Semiconductor

NDD02N60Z-1G

Sehemu ya hisa.: 135576

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.2A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V,

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NDF06N60ZG
ON Semiconductor

NDF06N60ZG

Sehemu ya hisa.: 145690

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.1A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V,

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NTD4904N-35G
ON Semiconductor

NTD4904N-35G

Sehemu ya hisa.: 860

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), 79A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 30A, 10V,

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NTD4960NT4G
ON Semiconductor

NTD4960NT4G

Sehemu ya hisa.: 979

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.9A (Ta), 55A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V,

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NTB6448ANG
ON Semiconductor

NTB6448ANG

Sehemu ya hisa.: 920

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V,

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NTB6448ANT4G
ON Semiconductor

NTB6448ANT4G

Sehemu ya hisa.: 953

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 13 mOhm @ 76A, 10V,

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NTD4905N-1G
ON Semiconductor

NTD4905N-1G

Sehemu ya hisa.: 880

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A (Ta), 67A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 30A, 10V,

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NTD4965N-35G
ON Semiconductor

NTD4965N-35G

Sehemu ya hisa.: 1007

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A (Ta), 68A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 30A, 10V,

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FDD4685TF_SB82135
ON Semiconductor

FDD4685TF_SB82135

Sehemu ya hisa.: 999

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.4A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 27 mOhm @ 8.4A, 10V,

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