Transistors - FETs, MOSFETs - safu

FDD8426H

Sehemu ya hisa.: 2797

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A, 10A, Rds On (Max) @ Id, Vgs: 12 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

MMDF3N04HDR2G

Sehemu ya hisa.: 2776

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDS6892AZ

Sehemu ya hisa.: 2717

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7.5A, Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS3601

Sehemu ya hisa.: 2704

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.3A, Rds On (Max) @ Id, Vgs: 480 mOhm @ 1.3A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

FDG6301N_D87Z

Sehemu ya hisa.: 3287

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 220mA, Rds On (Max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NTJD4401NT4G

Sehemu ya hisa.: 2719

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 630mA, Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG6303N_D87Z

Sehemu ya hisa.: 2711

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 500mA, Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NDS9957

Sehemu ya hisa.: 3327

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.6A, Rds On (Max) @ Id, Vgs: 160 mOhm @ 2.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDS6982S

Sehemu ya hisa.: 2774

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.3A, 8.6A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDMS3600S

Sehemu ya hisa.: 63274

Aina ya FET: 2 N-Channel (Dual) Asymmetrical, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 15A, 30A, Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

FW216A-TL-2W

Sehemu ya hisa.: 153552

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, 4V Drive, Futa kwa Chanzo cha Voltage (Vdss): 35V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 64 mOhm @ 4.5A, 10V,

ECH8601M-TL-H

Sehemu ya hisa.: 2899

Aina ya FET: 2 N-Channel (Dual) Common Drain, Makala ya FET: Logic Level Gate, 2.5V Drive, Futa kwa Chanzo cha Voltage (Vdss): 24V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Ta), Rds On (Max) @ Id, Vgs: 23 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

HUFA76413DK8T

Sehemu ya hisa.: 2732

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.1A, Rds On (Max) @ Id, Vgs: 49 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTMD2C02R2G

Sehemu ya hisa.: 2750

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.2A, 3.4A, Rds On (Max) @ Id, Vgs: 43 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

NVDD5894NLT4G

Sehemu ya hisa.: 89660

Aina ya FET: 2 N-Channel (Dual) Common Drain, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 50A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

NVMFD5853NWFT1G

Sehemu ya hisa.: 90403

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 12A, Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

NTHD4401PT1

Sehemu ya hisa.: 2644

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.1A, Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

FDZ2553N

Sehemu ya hisa.: 2739

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.6A, Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS9933BZ

Sehemu ya hisa.: 5427

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.9A, Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDW9926A

Sehemu ya hisa.: 2756

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

VEC2415-TL-E

Sehemu ya hisa.: 3310

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

FDPC8011S

Sehemu ya hisa.: 43392

Aina ya FET: 2 N-Channel (Dual) Asymmetrical, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 25V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 13A, 27A, Rds On (Max) @ Id, Vgs: 6 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

NTJD4105CT4

Sehemu ya hisa.: 2730

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 630mA, 775mA, Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDW2516NZ

Sehemu ya hisa.: 2695

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.8A, Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NDS8961

Sehemu ya hisa.: 2685

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.1A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTLJD2104PTBG

Sehemu ya hisa.: 2768

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.4A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

ECH8660-S-TL-H

Sehemu ya hisa.: 2959

FDS6982

Sehemu ya hisa.: 2700

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6.3A, 8.6A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

ECH8659-TL-H

Sehemu ya hisa.: 2892

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A, Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V,

FDQ7236AS

Sehemu ya hisa.: 2900

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A, 11A, Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SSD2025TF

Sehemu ya hisa.: 2716

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.3A, Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

MMDF2C03HDR2

Sehemu ya hisa.: 2708

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.1A, 3A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

HUFA76404DK8T

Sehemu ya hisa.: 2700

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 62V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.6A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NDH8304P

Sehemu ya hisa.: 2758

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.7A, Rds On (Max) @ Id, Vgs: 70 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

MCH6604-TL-E

Sehemu ya hisa.: 142874

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 50V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA, Rds On (Max) @ Id, Vgs: 7.8 Ohm @ 50mA, 4V,

NTJD1155LT1

Sehemu ya hisa.: 2754

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 8V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.3A, Rds On (Max) @ Id, Vgs: 175 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,