Transistors - FETs, MOSFETs - safu

QJD1210010

Sehemu ya hisa.: 2869

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 5V @ 10mA,

QJD1210SA1

Sehemu ya hisa.: 2941

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs (th) (Max) @ Id: 1.6V @ 34mA,

QJD1210SA2

Sehemu ya hisa.: 2896

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A, Rds On (Max) @ Id, Vgs: 17 mOhm @ 100A, 15V, Vgs (th) (Max) @ Id: 1.6V @ 34mA,

QJD1210SB1

Sehemu ya hisa.: 2931

QJD1210011

Sehemu ya hisa.: 3308

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100A (Tc), Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 5V @ 10mA,