Transistors - FETs, MOSFETs - safu | Bidhaa tofauti za semiconductor | 5

BSM180D12P3C007

Sehemu ya hisa.: 168

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 180A (Tc), Vgs (th) (Max) @ Id: 5.6V @ 50mA,

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Rohm Semiconductor

BSM300D12P2E001

Sehemu ya hisa.: 201

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 300A (Tc), Vgs (th) (Max) @ Id: 4V @ 68mA,

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Rohm Semiconductor

BSM080D12P2C008

Sehemu ya hisa.: 263

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 80A (Tc), Vgs (th) (Max) @ Id: 4V @ 13.2mA,

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Rohm Semiconductor

BSM120D12P2C005

Sehemu ya hisa.: 258

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 120A (Tc), Vgs (th) (Max) @ Id: 2.7V @ 22mA,

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Rohm Semiconductor

BSM180D12P2C101

Sehemu ya hisa.: 243

Aina ya FET: 2 N-Channel (Half Bridge), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 204A (Tc), Vgs (th) (Max) @ Id: 4V @ 35.2mA,

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Rohm Semiconductor

VT6J1T2CR

Sehemu ya hisa.: 168368

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, 1.2V Drive, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

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Rohm Semiconductor

EM6K31T2R

Sehemu ya hisa.: 181152

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA, Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

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Rohm Semiconductor

EM6K31GT2R

Sehemu ya hisa.: 153168

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, 2.5V Drive, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 250mA, Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

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Rohm Semiconductor

VT6M1T2CR

Sehemu ya hisa.: 125142

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, 1.2V Drive, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 100mA, Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

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Rohm Semiconductor

EM6J1T2R

Sehemu ya hisa.: 109230

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 200mA, Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

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Rohm Semiconductor

TT8J13TCR

Sehemu ya hisa.: 181566

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, 1.5V Drive, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

US6J11TR

Sehemu ya hisa.: 145887

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.3A, Rds On (Max) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

TT8J11TCR

Sehemu ya hisa.: 175857

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, 1.5V Drive, Futa kwa Chanzo cha Voltage (Vdss): 12V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.5A, Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

SP8M24FRATB

Sehemu ya hisa.: 109

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 45V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), 3.5A (Ta), Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, 63 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8M51FRATB

Sehemu ya hisa.: 152

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), 2.5A (Ta), Rds On (Max) @ Id, Vgs: 170 mOhm @ 3A, 10V, 290 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

TT8M3TR

Sehemu ya hisa.: 154779

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, 1.5V Drive, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A, 2.4A, Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

HP8KA1TB

Sehemu ya hisa.: 113065

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 14A, Rds On (Max) @ Id, Vgs: 5 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 10mA,

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Rohm Semiconductor

SP8K22FRATB

Sehemu ya hisa.: 87

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 45V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8K33FRATB

Sehemu ya hisa.: 149

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

TT8K1TR

Sehemu ya hisa.: 171251

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, 1.5V Drive, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

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Rohm Semiconductor

TT8K11TCR

Sehemu ya hisa.: 195555

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, 4V Drive, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A, Rds On (Max) @ Id, Vgs: 71 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1A,

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Rohm Semiconductor

SP8K52FRATB

Sehemu ya hisa.: 115

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3A (Ta), Rds On (Max) @ Id, Vgs: 170 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

TT8J3TR

Sehemu ya hisa.: 193760

Aina ya FET: 2 P-Channel (Dual), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 84 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8K32FRATB

Sehemu ya hisa.: 80

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 65 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

HP8S36TB

Sehemu ya hisa.: 130641

Aina ya FET: 2 N-Channel (Half Bridge), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 27A, 80A, Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 32A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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US6K1TR

Sehemu ya hisa.: 126806

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.5A, Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

US6M2GTR

Sehemu ya hisa.: 127

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.5A, 1A, Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, 390 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA, 2V @ 1mA,

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Rohm Semiconductor

HS8K11TB

Sehemu ya hisa.: 188805

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 7A, 11A, Rds On (Max) @ Id, Vgs: 17.9 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

TT8K2TR

Sehemu ya hisa.: 164928

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

TT8M2TR

Sehemu ya hisa.: 126279

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

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Rohm Semiconductor

SP8M5FRATB

Sehemu ya hisa.: 154

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), 7A (Ta), Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8M6FRATB

Sehemu ya hisa.: 153

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5A (Ta), 3.5A (Ta), Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V, 90 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8M21FRATB

Sehemu ya hisa.: 70

Aina ya FET: N and P-Channel, Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 45V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), 4A (Ta), Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V, 46 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

SP8K24FRATB

Sehemu ya hisa.: 123

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 45V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A (Ta), Rds On (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

TT8J2TR

Sehemu ya hisa.: 170382

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.5A, Rds On (Max) @ Id, Vgs: 84 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Rohm Semiconductor

US6K2TR

Sehemu ya hisa.: 124293

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.4A, Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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