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Diode - Warekebishaji - Moja

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  • Diode - Warekebishaji - Moja
HT14G A1G
Taiwan Semiconductor Corporation

HT14G A1G

Sehemu ya hisa.: 103

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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MBRF7100HC0G
Taiwan Semiconductor Corporation

MBRF7100HC0G

Sehemu ya hisa.: 147

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 7.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 920mV @ 7.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SFAF802G C0G
Taiwan Semiconductor Corporation

SFAF802G C0G

Sehemu ya hisa.: 124

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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MBRF1690HC0G
Taiwan Semiconductor Corporation

MBRF1690HC0G

Sehemu ya hisa.: 156

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 16A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 16A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SFAF2003G C0G
Taiwan Semiconductor Corporation

SFAF2003G C0G

Sehemu ya hisa.: 115

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 20A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SFAF801GHC0G
Taiwan Semiconductor Corporation

SFAF801GHC0G

Sehemu ya hisa.: 85

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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S1GLS RVG
Taiwan Semiconductor Corporation

S1GLS RVG

Sehemu ya hisa.: 99

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1.2A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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SFF1002GHC0G
Taiwan Semiconductor Corporation

SFF1002GHC0G

Sehemu ya hisa.: 74

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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HERA803G C0G
Taiwan Semiconductor Corporation

HERA803G C0G

Sehemu ya hisa.: 153

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SFAF806GHC0G
Taiwan Semiconductor Corporation

SFAF806GHC0G

Sehemu ya hisa.: 87

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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MBRF1050HC0G
Taiwan Semiconductor Corporation

MBRF1050HC0G

Sehemu ya hisa.: 97

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 800mV @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SS115LS RVG
Taiwan Semiconductor Corporation

SS115LS RVG

Sehemu ya hisa.: 86

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SFAS804GHMNG
Taiwan Semiconductor Corporation

SFAS804GHMNG

Sehemu ya hisa.: 86

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SFAF1002GHC0G
Taiwan Semiconductor Corporation

SFAF1002GHC0G

Sehemu ya hisa.: 98

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SFF1608G C0G
Taiwan Semiconductor Corporation

SFF1608G C0G

Sehemu ya hisa.: 145

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 16A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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RS1DFS MXG
Taiwan Semiconductor Corporation

RS1DFS MXG

Sehemu ya hisa.: 120

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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UGF12JDHC0G
Taiwan Semiconductor Corporation

UGF12JDHC0G

Sehemu ya hisa.: 66

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 3.1V @ 12A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 45ns,

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MUR160A A0G
Taiwan Semiconductor Corporation

MUR160A A0G

Sehemu ya hisa.: 138

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.25V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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HERA804G C0G
Taiwan Semiconductor Corporation

HERA804G C0G

Sehemu ya hisa.: 69

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 8A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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SFF508G C0G
Taiwan Semiconductor Corporation

SFF508G C0G

Sehemu ya hisa.: 160

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 2.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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HERAF1008G C0G
Taiwan Semiconductor Corporation

HERAF1008G C0G

Sehemu ya hisa.: 163

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 80ns,

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SFF2003G C0G
Taiwan Semiconductor Corporation

SFF2003G C0G

Sehemu ya hisa.: 119

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SFAF2008G C0G
Taiwan Semiconductor Corporation

SFAF2008G C0G

Sehemu ya hisa.: 86

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 20A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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LSR103 L0G
Taiwan Semiconductor Corporation

LSR103 L0G

Sehemu ya hisa.: 138

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 30V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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UGA15120HC0G
Taiwan Semiconductor Corporation

UGA15120HC0G

Sehemu ya hisa.: 110

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 15A, Voltage - Sambaza (Vf) (Max) @ Kama: 2.9V @ 15A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 65ns,

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SFF1007GA C0G
Taiwan Semiconductor Corporation

SFF1007GA C0G

Sehemu ya hisa.: 85

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 500V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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MBR1635HC0G
Taiwan Semiconductor Corporation

MBR1635HC0G

Sehemu ya hisa.: 145

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 35V, Sasa - Wastani Waliyorekebishwa (Io): 16A, Voltage - Sambaza (Vf) (Max) @ Kama: 630mV @ 16A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SFAF1008GHC0G
Taiwan Semiconductor Corporation

SFAF1008GHC0G

Sehemu ya hisa.: 90

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SFF2002GHC0G
Taiwan Semiconductor Corporation

SFF2002GHC0G

Sehemu ya hisa.: 74

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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S1DLS RQG
Taiwan Semiconductor Corporation

S1DLS RQG

Sehemu ya hisa.: 117

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1.2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1.2A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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SFF2004GHC0G
Taiwan Semiconductor Corporation

SFF2004GHC0G

Sehemu ya hisa.: 107

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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MBRF790 C0G
Taiwan Semiconductor Corporation

MBRF790 C0G

Sehemu ya hisa.: 151

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 7.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 920mV @ 7.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF1635HC0G
Taiwan Semiconductor Corporation

MBRF1635HC0G

Sehemu ya hisa.: 137

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 35V, Sasa - Wastani Waliyorekebishwa (Io): 16A, Voltage - Sambaza (Vf) (Max) @ Kama: 630mV @ 16A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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MBRF1035 C0G
Taiwan Semiconductor Corporation

MBRF1035 C0G

Sehemu ya hisa.: 156

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 35V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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S1GLSHRQG
Taiwan Semiconductor Corporation

S1GLSHRQG

Sehemu ya hisa.: 118

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1.2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1.2A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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MBRF760 C0G
Taiwan Semiconductor Corporation

MBRF760 C0G

Sehemu ya hisa.: 155

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 7.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 7.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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