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Diode - Warekebishaji - Moja

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  • Diode - Warekebishaji - Moja
S1BL RUG
Taiwan Semiconductor Corporation

S1BL RUG

Sehemu ya hisa.: 116

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.8µs,

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SR204HR0G
Taiwan Semiconductor Corporation

SR204HR0G

Sehemu ya hisa.: 169

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SS29LHR3G
Taiwan Semiconductor Corporation

SS29LHR3G

Sehemu ya hisa.: 160

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 90V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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RS1JL RUG
Taiwan Semiconductor Corporation

RS1JL RUG

Sehemu ya hisa.: 159

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 800mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 800mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 250ns,

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SS25L R3G
Taiwan Semiconductor Corporation

SS25L R3G

Sehemu ya hisa.: 156

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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UG56GHA0G
Taiwan Semiconductor Corporation

UG56GHA0G

Sehemu ya hisa.: 160

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.55V @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 20ns,

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SS110L R3G
Taiwan Semiconductor Corporation

SS110L R3G

Sehemu ya hisa.: 181

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 800mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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MUR420HB0G
Taiwan Semiconductor Corporation

MUR420HB0G

Sehemu ya hisa.: 104

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Voltage - Sambaza (Vf) (Max) @ Kama: 890mV @ 4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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SS26LHRUG
Taiwan Semiconductor Corporation

SS26LHRUG

Sehemu ya hisa.: 95

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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RS1KL RUG
Taiwan Semiconductor Corporation

RS1KL RUG

Sehemu ya hisa.: 140

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 800mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 800mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 500ns,

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RS1KL R3G
Taiwan Semiconductor Corporation

RS1KL R3G

Sehemu ya hisa.: 153

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 800mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 800mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 500ns,

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RSFGL R3G
Taiwan Semiconductor Corporation

RSFGL R3G

Sehemu ya hisa.: 144

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 500mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 500mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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SS310LHM2G
Taiwan Semiconductor Corporation

SS310LHM2G

Sehemu ya hisa.: 165

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 850mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SS16L RUG
Taiwan Semiconductor Corporation

SS16L RUG

Sehemu ya hisa.: 140

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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LL4006G L0
Taiwan Semiconductor Corporation

LL4006G L0

Sehemu ya hisa.: 189

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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SRT16 A1G
Taiwan Semiconductor Corporation

SRT16 A1G

Sehemu ya hisa.: 144

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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S1JL R3G
Taiwan Semiconductor Corporation

S1JL R3G

Sehemu ya hisa.: 115

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.8µs,

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SS215L RUG
Taiwan Semiconductor Corporation

SS215L RUG

Sehemu ya hisa.: 128

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SS110L RUG
Taiwan Semiconductor Corporation

SS110L RUG

Sehemu ya hisa.: 182

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 800mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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S1DLHR3G
Taiwan Semiconductor Corporation

S1DLHR3G

Sehemu ya hisa.: 104

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.8µs,

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ES1JL RUG
Taiwan Semiconductor Corporation

ES1JL RUG

Sehemu ya hisa.: 143

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SS22L R3G
Taiwan Semiconductor Corporation

SS22L R3G

Sehemu ya hisa.: 91

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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S1KL RUG
Taiwan Semiconductor Corporation

S1KL RUG

Sehemu ya hisa.: 101

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.8µs,

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HER206G B0G
Taiwan Semiconductor Corporation

HER206G B0G

Sehemu ya hisa.: 114

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SS115L RUG
Taiwan Semiconductor Corporation

SS115L RUG

Sehemu ya hisa.: 108

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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S1ML RVG
Taiwan Semiconductor Corporation

S1ML RVG

Sehemu ya hisa.: 159

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.8µs,

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HER207G B0G
Taiwan Semiconductor Corporation

HER207G B0G

Sehemu ya hisa.: 157

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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LL4007G L0
Taiwan Semiconductor Corporation

LL4007G L0

Sehemu ya hisa.: 130

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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UG58GHA0G
Taiwan Semiconductor Corporation

UG58GHA0G

Sehemu ya hisa.: 148

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 2.1V @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 20ns,

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SR215HA0G
Taiwan Semiconductor Corporation

SR215HA0G

Sehemu ya hisa.: 172

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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HER151G B0G
Taiwan Semiconductor Corporation

HER151G B0G

Sehemu ya hisa.: 120

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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S3JHR7G
Taiwan Semiconductor Corporation

S3JHR7G

Sehemu ya hisa.: 190

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.15V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 1.5µs,

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ES1FL RUG
Taiwan Semiconductor Corporation

ES1FL RUG

Sehemu ya hisa.: 174

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SK20H45 A0G
Taiwan Semiconductor Corporation

SK20H45 A0G

Sehemu ya hisa.: 187

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 45V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 20A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SR205 A0G
Taiwan Semiconductor Corporation

SR205 A0G

Sehemu ya hisa.: 193

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES1C R3G
Taiwan Semiconductor Corporation

ES1C R3G

Sehemu ya hisa.: 154

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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