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Diode - Warekebishaji - Moja

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  • Diode - Warekebishaji - Moja
SF1607PTHC0G
Taiwan Semiconductor Corporation

SF1607PTHC0G

Sehemu ya hisa.: 147

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 500V, Sasa - Wastani Waliyorekebishwa (Io): 16A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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ES2AA R3G
Taiwan Semiconductor Corporation

ES2AA R3G

Sehemu ya hisa.: 152

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SF61GHR0G
Taiwan Semiconductor Corporation

SF61GHR0G

Sehemu ya hisa.: 167

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 6A, Voltage - Sambaza (Vf) (Max) @ Kama: 975mV @ 6A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SF1605PTHC0G
Taiwan Semiconductor Corporation

SF1605PTHC0G

Sehemu ya hisa.: 146

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 16A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 8A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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MUR4L20 R0G
Taiwan Semiconductor Corporation

MUR4L20 R0G

Sehemu ya hisa.: 130

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Voltage - Sambaza (Vf) (Max) @ Kama: 890mV @ 4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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MUR105S R5G
Taiwan Semiconductor Corporation

MUR105S R5G

Sehemu ya hisa.: 168

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 875mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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MUR420 R0G
Taiwan Semiconductor Corporation

MUR420 R0G

Sehemu ya hisa.: 192

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Voltage - Sambaza (Vf) (Max) @ Kama: 890mV @ 4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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SF66G R0G
Taiwan Semiconductor Corporation

SF66G R0G

Sehemu ya hisa.: 141

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 6A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 6A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SF3004PTHC0G
Taiwan Semiconductor Corporation

SF3004PTHC0G

Sehemu ya hisa.: 134

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 30A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 15A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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HER205G R0G
Taiwan Semiconductor Corporation

HER205G R0G

Sehemu ya hisa.: 151

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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HER308G R0G
Taiwan Semiconductor Corporation

HER308G R0G

Sehemu ya hisa.: 122

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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RS2J R5G
Taiwan Semiconductor Corporation

RS2J R5G

Sehemu ya hisa.: 114

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 250ns,

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MUR4L60 R0G
Taiwan Semiconductor Corporation

MUR4L60 R0G

Sehemu ya hisa.: 117

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 4A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.28V @ 4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 50ns,

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RS1G M2G
Taiwan Semiconductor Corporation

RS1G M2G

Sehemu ya hisa.: 179

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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SK515BHR5G
Taiwan Semiconductor Corporation

SK515BHR5G

Sehemu ya hisa.: 148

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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UG58GHR0G
Taiwan Semiconductor Corporation

UG58GHR0G

Sehemu ya hisa.: 168

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 2.1V @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 20ns,

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ES3FB M4G
Taiwan Semiconductor Corporation

ES3FB M4G

Sehemu ya hisa.: 158

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 300V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.13V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SK315BHR5G
Taiwan Semiconductor Corporation

SK315BHR5G

Sehemu ya hisa.: 166

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SS16HR3G
Taiwan Semiconductor Corporation

SS16HR3G

Sehemu ya hisa.: 188

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 60V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SR220 A0G
Taiwan Semiconductor Corporation

SR220 A0G

Sehemu ya hisa.: 148

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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FR152G R0G
Taiwan Semiconductor Corporation

FR152G R0G

Sehemu ya hisa.: 156

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1.5A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1.5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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SK14B M4G
Taiwan Semiconductor Corporation

SK14B M4G

Sehemu ya hisa.: 183

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES1G M2G
Taiwan Semiconductor Corporation

ES1G M2G

Sehemu ya hisa.: 117

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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ES2DVHR5G
Taiwan Semiconductor Corporation

ES2DVHR5G

Sehemu ya hisa.: 144

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 900mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 20ns,

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SSL12 R3G
Taiwan Semiconductor Corporation

SSL12 R3G

Sehemu ya hisa.: 115

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 390mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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FR307G A0G
Taiwan Semiconductor Corporation

FR307G A0G

Sehemu ya hisa.: 126

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 500ns,

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SF34GHR0G
Taiwan Semiconductor Corporation

SF34GHR0G

Sehemu ya hisa.: 205

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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SR504HA0G
Taiwan Semiconductor Corporation

SR504HA0G

Sehemu ya hisa.: 194

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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ES2A R5G
Taiwan Semiconductor Corporation

ES2A R5G

Sehemu ya hisa.: 174

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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MUR190HR0G
Taiwan Semiconductor Corporation

MUR190HR0G

Sehemu ya hisa.: 144

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 900V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.7V @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 75ns,

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SSL14 R3G
Taiwan Semiconductor Corporation

SSL14 R3G

Sehemu ya hisa.: 147

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 390mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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TSF20H150C-S C0G
Taiwan Semiconductor Corporation

TSF20H150C-S C0G

Sehemu ya hisa.: 164

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 920mV @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SF2003PT C0G
Taiwan Semiconductor Corporation

SF2003PT C0G

Sehemu ya hisa.: 130

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 150V, Sasa - Wastani Waliyorekebishwa (Io): 20A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 20A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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ES2DHR5G
Taiwan Semiconductor Corporation

ES2DHR5G

Sehemu ya hisa.: 174

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 950mV @ 2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 35ns,

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TSPB10U45S S2G
Taiwan Semiconductor Corporation

TSPB10U45S S2G

Sehemu ya hisa.: 150

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 45V, Sasa - Wastani Waliyorekebishwa (Io): 10A, Voltage - Sambaza (Vf) (Max) @ Kama: 460mV @ 10A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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SK52BHR5G
Taiwan Semiconductor Corporation

SK52BHR5G

Sehemu ya hisa.: 105

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 5A, Voltage - Sambaza (Vf) (Max) @ Kama: 550mV @ 5A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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