Transistors - Bipolar (BJT) - safu

Nyumbani
Transistors - Bipolar (BJT) - safu

2SC4207-Y(TE85L,F)

Toshiba Semiconductor and Storage

2SC4207-Y(TE85L,F)

Sehemu ya hisa.: 152609

Aina ya Transistor: 2 NPN (Dual) Matched Pair, Common Emitter, Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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2SC4944-Y(TE85L,F)

Toshiba Semiconductor and Storage

2SC4944-Y(TE85L,F)

Sehemu ya hisa.: 98

Aina ya Transistor: 2 NPN (Dual) Matched Pair, Common Emitter, Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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2SA1618-Y(TE85L,F)

Toshiba Semiconductor and Storage

2SA1618-Y(TE85L,F)

Sehemu ya hisa.: 124

Aina ya Transistor: 2 PNP (Dual) Matched Pair, Common Emitter, Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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2SA1873-Y(TE85L,F)

Toshiba Semiconductor and Storage

2SA1873-Y(TE85L,F)

Sehemu ya hisa.: 114931

Aina ya Transistor: 2 PNP (Dual) Matched Pair, Common Emitter, Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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2SA1873-GR(TE85L,F

Toshiba Semiconductor and Storage

2SA1873-GR(TE85L,F

Sehemu ya hisa.: 137653

Aina ya Transistor: 2 PNP (Dual) Matched Pair, Common Emitter, Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

Wishlist.

2SC4207-BL(TE85L,F

Toshiba Semiconductor and Storage

2SC4207-BL(TE85L,F

Sehemu ya hisa.: 153875

Aina ya Transistor: 2 NPN (Dual), Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V,

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2SC4207-GR(TE85L,F

Toshiba Semiconductor and Storage

2SC4207-GR(TE85L,F

Sehemu ya hisa.: 9987

Aina ya Transistor: 2 NPN (Dual) Common Emitter, Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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2SA1618-GR(TE85L,F

Toshiba Semiconductor and Storage

2SA1618-GR(TE85L,F

Sehemu ya hisa.: 115889

Aina ya Transistor: 2 PNP (Dual) Matched Pair, Common Emitter, Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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HN1B01FU-Y(L,F,T)

Toshiba Semiconductor and Storage

HN1B01FU-Y(L,F,T)

Sehemu ya hisa.: 4365

Aina ya Transistor: NPN, PNP, Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

HN1A01FE-GR,LF

Sehemu ya hisa.: 167758

Aina ya Transistor: 2 PNP (Dual), Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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HN1C03FU-A(TE85L,F

Toshiba Semiconductor and Storage

HN1C03FU-A(TE85L,F

Sehemu ya hisa.: 115887

Aina ya Transistor: 2 NPN (Dual), Mkusanyaji wa sasa (Ic) (Max): 300mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kueneza kwa Vce (Max) @ Ib, Ic: 100mV @ 3mA, 30mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V,

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Toshiba Semiconductor and Storage

HN4A51JTE85LF

Sehemu ya hisa.: 179411

Aina ya Transistor: 2 PNP (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 120V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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HN1A01F-GR(TE85L,F

Toshiba Semiconductor and Storage

HN1A01F-GR(TE85L,F

Sehemu ya hisa.: 4432

Aina ya Transistor: 2 PNP (Dual), Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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ULN2004AFWG,N,E

Toshiba Semiconductor and Storage

ULN2004AFWG,N,E

Sehemu ya hisa.: 124168

Aina ya Transistor: 7 NPN Darlington, Mkusanyaji wa sasa (Ic) (Max): 500mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, Sasa - Mtoza Ushuru (Max): 50µA, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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HN1A01F-Y(TE85L,F)

Toshiba Semiconductor and Storage

HN1A01F-Y(TE85L,F)

Sehemu ya hisa.: 104094

Aina ya Transistor: 2 PNP (Dual), Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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HN4B04J(TE85L,F)

Toshiba Semiconductor and Storage

HN4B04J(TE85L,F)

Sehemu ya hisa.: 147055

Aina ya Transistor: NPN, PNP, Mkusanyaji wa sasa (Ic) (Max): 500mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 30V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100µA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V,

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Toshiba Semiconductor and Storage

HN1A01FU-Y,LF

Sehemu ya hisa.: 104803

Aina ya Transistor: 2 PNP (Dual), Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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TPCP8901(TE85L,F,M

Toshiba Semiconductor and Storage

TPCP8901(TE85L,F,M

Sehemu ya hisa.: 104

Aina ya Transistor: NPN, PNP, Mkusanyaji wa sasa (Ic) (Max): 1A, 800mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V,

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Toshiba Semiconductor and Storage

HN1B04FU-GR,LF

Sehemu ya hisa.: 184759

Aina ya Transistor: NPN, PNP, Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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HN1B01F-GR(TE85L,F

Toshiba Semiconductor and Storage

HN1B01F-GR(TE85L,F

Sehemu ya hisa.: 4437

Aina ya Transistor: NPN, PNP, Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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HN4A06J(TE85L,F)

Toshiba Semiconductor and Storage

HN4A06J(TE85L,F)

Sehemu ya hisa.: 4500

Aina ya Transistor: 2 PNP (Dual) Matched Pair, Common Emitter, Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 120V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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HN2C01FE-GR(T5L,F)

Toshiba Semiconductor and Storage

HN2C01FE-GR(T5L,F)

Sehemu ya hisa.: 4488

Aina ya Transistor: 2 NPN (Dual), Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

HN1C01FU-GR,LF

Sehemu ya hisa.: 184335

Aina ya Transistor: 2 NPN (Dual), Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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HN3A51F(TE85L,F)

Toshiba Semiconductor and Storage

HN3A51F(TE85L,F)

Sehemu ya hisa.: 4476

Aina ya Transistor: 2 PNP (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 120V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

ULN2003APG,CN

Sehemu ya hisa.: 4401

Aina ya Transistor: 7 NPN Darlington, Mkusanyaji wa sasa (Ic) (Max): 500mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, Sasa - Mtoza Ushuru (Max): 50µA, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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HN1C01FU-Y(T5L,F,T

Toshiba Semiconductor and Storage

HN1C01FU-Y(T5L,F,T

Sehemu ya hisa.: 6508

Aina ya Transistor: 2 NPN (Dual), Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

HN1B01FU-GR,LF

Sehemu ya hisa.: 151500

Aina ya Transistor: NPN, PNP, Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V,

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ULN2803AFWG,C,EL

Toshiba Semiconductor and Storage

ULN2803AFWG,C,EL

Sehemu ya hisa.: 4471

Aina ya Transistor: 8 NPN Darlington, Mkusanyaji wa sasa (Ic) (Max): 500mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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HN1C03F-B(TE85L,F)

Toshiba Semiconductor and Storage

HN1C03F-B(TE85L,F)

Sehemu ya hisa.: 9945

Aina ya Transistor: 2 NPN (Dual), Mkusanyaji wa sasa (Ic) (Max): 300mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 20V, Kueneza kwa Vce (Max) @ Ib, Ic: 100mV @ 3mA, 30mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V,

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Toshiba Semiconductor and Storage

HN1C01FYTE85LF

Sehemu ya hisa.: 111105

Aina ya Transistor: 2 NPN (Dual), Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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HN1B04F(TE85L,F)

Toshiba Semiconductor and Storage

HN1B04F(TE85L,F)

Sehemu ya hisa.: 4492

Aina ya Transistor: NPN, PNP, Mkusanyaji wa sasa (Ic) (Max): 500mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 30V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V,

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ULN2003AFWG,O,N,E

Toshiba Semiconductor and Storage

ULN2003AFWG,O,N,E

Sehemu ya hisa.: 4430

Aina ya Transistor: 7 NPN Darlington, Mkusanyaji wa sasa (Ic) (Max): 500mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, Sasa - Mtoza Ushuru (Max): 50µA, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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HN4B01JE(TE85L,F)

Toshiba Semiconductor and Storage

HN4B01JE(TE85L,F)

Sehemu ya hisa.: 76

Aina ya Transistor: NPN, PNP (Emitter Coupled), Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 10MA, 100MA,

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Toshiba Semiconductor and Storage

ULN2803APG,CN

Sehemu ya hisa.: 4464

Aina ya Transistor: 8 NPN Darlington, Mkusanyaji wa sasa (Ic) (Max): 500mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA, Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V,

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HN3C51F-BL(TE85L,F

Toshiba Semiconductor and Storage

HN3C51F-BL(TE85L,F

Sehemu ya hisa.: 4503

Aina ya Transistor: 2 NPN (Dual), Mkusanyaji wa sasa (Ic) (Max): 100mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 120V, Kueneza kwa Vce (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V,

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Toshiba Semiconductor and Storage

HN1B04FU-Y,LF

Sehemu ya hisa.: 9904

Aina ya Transistor: NPN, PNP, Mkusanyaji wa sasa (Ic) (Max): 150mA, Voltage - Mtozaji wa Mtoaji wa Mtoaji (Max): 50V, Kueneza kwa Vce (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA, Sasa - Mtoza Ushuru (Max): 100nA (ICBO), Faida ya DC ya Sasa (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V,

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