Transistors - FETs, MOSFETs - Moja

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Transistors - FETs, MOSFETs - Moja

Vishay Siliconix

2N6661JTXV02

Sehemu ya hisa.: 1822

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 860mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6661JTXL02

Sehemu ya hisa.: 6256

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 860mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6661JTVP02

Sehemu ya hisa.: 1814

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 860mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6661JTX02

Sehemu ya hisa.: 1843

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 860mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6661-E3

Sehemu ya hisa.: 1817

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 860mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6661-2

Sehemu ya hisa.: 1824

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 860mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6660JTXV02

Sehemu ya hisa.: 1839

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 990mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6660JTXP02

Sehemu ya hisa.: 1797

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 990mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6660JTX02

Sehemu ya hisa.: 1843

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 990mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6660JTXL02

Sehemu ya hisa.: 1782

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 990mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6660-E3

Sehemu ya hisa.: 1842

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 990mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6660JTVP02

Sehemu ya hisa.: 1813

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 990mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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Vishay Siliconix

2N7002-E3

Sehemu ya hisa.: 1534

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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Vishay Siliconix

2N7002E

Sehemu ya hisa.: 125033

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 240mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V,

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Vishay Siliconix

2N7002-T1-GE3

Sehemu ya hisa.: 166741

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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Vishay Siliconix

2N6661JAN02

Sehemu ya hisa.: 9463

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 860mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6661JTXP02

Sehemu ya hisa.: 9544

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 90V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 860mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 4 Ohm @ 1A, 10V,

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Vishay Siliconix

2N6660-2

Sehemu ya hisa.: 9516

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 990mA (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V,

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Vishay Siliconix

2N7002E-T1-GE3

Sehemu ya hisa.: 199703

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 240mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V,

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Vishay Siliconix

2N7002-T1-E3

Sehemu ya hisa.: 146560

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 115mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 5V, 10V, Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V,

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Vishay Siliconix

2N7002E-T1-E3

Sehemu ya hisa.: 175390

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 240mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 3 Ohm @ 250mA, 10V,

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Vishay Siliconix

2N7002K-T1-GE3

Sehemu ya hisa.: 122158

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 300mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V,

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Vishay Siliconix

2N7002K-T1-E3

Sehemu ya hisa.: 162145

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 300mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V,

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Vishay Siliconix

3N164

Sehemu ya hisa.: 1783

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 300 Ohm @ 100µA, 20V,

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Vishay Siliconix

3N163-E3

Sehemu ya hisa.: 1851

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V,

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Vishay Siliconix

3N163

Sehemu ya hisa.: 1830

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V,

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Vishay Siliconix

3N163-2

Sehemu ya hisa.: 6254

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 250 Ohm @ 100µA, 20V,

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Vishay Siliconix

BS250KL-TR1-E3

Sehemu ya hisa.: 409

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 270mA (Ta), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V,

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Vishay Siliconix

SIHFS9N60A-GE3

Sehemu ya hisa.: 106

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 600V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.2A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V,

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Vishay Siliconix

IRFR010TRLPBF

Sehemu ya hisa.: 112484

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 50V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8.2A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V,

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Vishay Siliconix

IRF630STRLPBF

Sehemu ya hisa.: 77056

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V,

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SIS429DNT-T1-GE3

Vishay Siliconix

SIS429DNT-T1-GE3

Sehemu ya hisa.: 99

Aina ya FET: P-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 21 mOhm @ 10.5A, 10V,

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Vishay Siliconix

IRF840ASTRRPBF

Sehemu ya hisa.: 39752

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V,

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Vishay Siliconix

IRF840LC

Sehemu ya hisa.: 18635

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 500V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V,

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Vishay Siliconix

IRFI730GPBF

Sehemu ya hisa.: 30867

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 400V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.7A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1 Ohm @ 2.1A, 10V,

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Vishay Siliconix

IRF610LPBF

Sehemu ya hisa.: 82205

Aina ya FET: N-Channel, Teknolojia: MOSFET (Metal Oxide), Futa kwa Chanzo cha Voltage (Vdss): 200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V,

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3600

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