Transistors - FETs, MOSFETs - Moja

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Transistors - FETs, MOSFETs - Moja

C2M1000170J-TR

Sehemu ya hisa.: 12544

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1700V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V,

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C3M0065090J-TR

Sehemu ya hisa.: 6828

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V,

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C3M0120100K

Sehemu ya hisa.: 8031

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V,

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C3M0120090J-TR

Sehemu ya hisa.: 10635

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V,

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C3M0030090K

Sehemu ya hisa.: 2469

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 63A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 39 mOhm @ 35A, 15V,

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C2M0045170P

Sehemu ya hisa.: 2736

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1700V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 72A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 59 mOhm @ 50A, 20V,

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E3M0120090D

Sehemu ya hisa.: 3307

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V,

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C3M0280090J

Sehemu ya hisa.: 19166

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V,

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C3M0075120K

Sehemu ya hisa.: 5595

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V,

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C3M0120100J

Sehemu ya hisa.: 3965

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V,

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CPMF-1200-S080B

CPMF-1200-S080B

Sehemu ya hisa.: 2177

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 50A (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V,

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C2M0025120D

Sehemu ya hisa.: 1093

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 90A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V,

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C3M0280090J-TR

Sehemu ya hisa.: 19172

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V,

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C3M0065100J

Sehemu ya hisa.: 2848

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V,

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C2M0080170P

Sehemu ya hisa.: 2196

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1700V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 40A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 125 mOhm @ 28A, 20V,

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CPMF-1200-S160B

CPMF-1200-S160B

Sehemu ya hisa.: 2236

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 28A (Tj), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V,

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C2M0045170D

Sehemu ya hisa.: 866

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1700V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 72A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 70 mOhm @ 50A, 20V,

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C3M0280090D

Sehemu ya hisa.: 20168

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V,

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C3M0075120J

Sehemu ya hisa.: 5794

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V,

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C3M0065100K

Sehemu ya hisa.: 5808

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V,

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C3M0120090J

Sehemu ya hisa.: 10579

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V,

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CMF20120D

Sehemu ya hisa.: 976

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 42A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V,

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CMF10120D

Sehemu ya hisa.: 1120

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 24A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V,

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C3M0120090D

Sehemu ya hisa.: 10936

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 23A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V,

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C2M0040120D

Sehemu ya hisa.: 2045

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 60A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V,

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C2M0160120D

Sehemu ya hisa.: 8382

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 19A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 196 mOhm @ 10A, 20V,

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C3M0065100J-TR

Sehemu ya hisa.: 93

Aina ya FET: N-Channel, Teknolojia: SiC (Silicon Carbide Junction Transistor), Futa kwa Chanzo cha Voltage (Vdss): 1000V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V,

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C2M1000170J

Sehemu ya hisa.: 12480

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1700V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 5.3A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V,

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C3M0075120J-TR

Sehemu ya hisa.: 280

Aina ya FET: N-Channel, Teknolojia: SiC (Silicon Carbide Junction Transistor), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V,

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E3M0065090D

Sehemu ya hisa.: 9953

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 84.5 mOhm @ 20A, 15V,

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E3M0280090D

Sehemu ya hisa.: 8442

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11.5A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V,

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C3M0065090D

Sehemu ya hisa.: 6981

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 36A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V,

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C3M0065090J

Sehemu ya hisa.: 6843

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 900V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 35A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 15V, Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V,

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C2M0280120D

Sehemu ya hisa.: 12900

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 10A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 370 mOhm @ 6A, 20V,

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C2M1000170D

Sehemu ya hisa.: 13276

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1700V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.9A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 20V,

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C2M0080120D

Sehemu ya hisa.: 4209

Aina ya FET: N-Channel, Teknolojia: SiCFET (Silicon Carbide), Futa kwa Chanzo cha Voltage (Vdss): 1200V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 36A (Tc), Voltage ya Kuendesha (Max Rds On, Min Rds On): 20V, Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V,

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