Andika | Maelezo. |
Hali ya Sehemu | Obsolete |
---|---|
Aina ya FET | N-Channel |
Teknolojia | SiCFET (Silicon Carbide) |
Futa kwa Chanzo cha Voltage (Vdss) | 700V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 110A (Tc) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 60A, 20V |
Vgs (th) (Max) @ Id | 2.4V @ 1mA |
Malipo ya Lango (Qg) (Max) @ Vgs | 220nC @ 20V |
Vgs (Upeo) | +25V, -10V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 3950pF @ 700V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 556W (Tc) |
Joto la Uendeshaji | -55°C ~ 175°C (TJ) |
Aina ya Kuweka | Through Hole |
Kifurushi cha Kifaa cha muuzaji | TO-247-3 |
Kifurushi / Kesi | TO-247-3 |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |