| Andika | Maelezo. |
| Hali ya Sehemu | Active |
|---|---|
| Aina ya FET | 2 N-Channel (Half Bridge) |
| Makala ya FET | Silicon Carbide (SiC) |
| Futa kwa Chanzo cha Voltage (Vdss) | 1200V (1.2kV) |
| Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 444A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 400A, 20V |
| Vgs (th) (Max) @ Id | 4V @ 105mA |
| Malipo ya Lango (Qg) (Max) @ Vgs | 1127nC @ 20V |
| Uwezo wa Kuingiza (Ciss) (Max) @ Vds | - |
| Nguvu - Max | 3000W |
| Joto la Uendeshaji | 175°C (TJ) |
| Aina ya Kuweka | - |
| Kifurushi / Kesi | Module |
| Kifurushi cha Kifaa cha muuzaji | Module |
| Hali ya RoHS. | Rohs inakubaliana. |
|---|---|
| Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
| Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
| Stock Jamii. | Inapatikana hisa. |
