Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | P-Channel |
Teknolojia | MOSFET (Metal Oxide) |
Futa kwa Chanzo cha Voltage (Vdss) | 8V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 10A (Ta) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 12.2 mOhm @ 2A, 4.5V |
Vgs (th) (Max) @ Id | 1.1V @ 250µA |
Malipo ya Lango (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
Vgs (Upeo) | -6V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 1390pF @ 4V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 1.5W (Ta) |
Joto la Uendeshaji | -55°C ~ 150°C (TJ) |
Aina ya Kuweka | Surface Mount |
Kifurushi cha Kifaa cha muuzaji | 9-DSBGA |
Kifurushi / Kesi | 9-UFBGA, DSBGA |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |