Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | P-Channel |
Teknolojia | MOSFET (Metal Oxide) |
Futa kwa Chanzo cha Voltage (Vdss) | 12V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 3.3A (Ta) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 500mA, 4.5V |
Vgs (th) (Max) @ Id | 1V @ 250µA |
Malipo ya Lango (Qg) (Max) @ Vgs | 5nC @ 4.5V |
Vgs (Upeo) | -6V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 350pF @ 6V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 820mW (Ta) |
Joto la Uendeshaji | -55°C ~ 150°C (TJ) |
Aina ya Kuweka | Surface Mount |
Kifurushi cha Kifaa cha muuzaji | U-WLB1010-4 |
Kifurushi / Kesi | 4-UFBGA, WLBGA |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |