Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | P-Channel |
Teknolojia | MOSFET (Metal Oxide) |
Futa kwa Chanzo cha Voltage (Vdss) | 25V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 145mA (Ta) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs | 10 Ohm @ 200mA, 4.5V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA |
Malipo ya Lango (Qg) (Max) @ Vgs | 0.35nC @ 4.5V |
Vgs (Upeo) | -8V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 27.2pF @ 10V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 360mW (Ta) |
Joto la Uendeshaji | -55°C ~ 150°C (TJ) |
Aina ya Kuweka | Surface Mount |
Kifurushi cha Kifaa cha muuzaji | X2-DFN0806-3 |
Kifurushi / Kesi | 3-XFDFN |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |