Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | P-Channel |
Teknolojia | MOSFET (Metal Oxide) |
Futa kwa Chanzo cha Voltage (Vdss) | 50V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 180mA (Ta) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 2.5V, 5V |
Rds On (Max) @ Id, Vgs | 8 Ohm @ 100mA, 5V |
Vgs (th) (Max) @ Id | 2.1V @ 250µA |
Malipo ya Lango (Qg) (Max) @ Vgs | - |
Vgs (Upeo) | ±20V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 27pF @ 25V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 470mW (Ta) |
Joto la Uendeshaji | -55°C ~ 150°C (TJ) |
Aina ya Kuweka | Surface Mount |
Kifurushi cha Kifaa cha muuzaji | 3-DFN1006 (1.0x0.6) |
Kifurushi / Kesi | 3-UFDFN |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |