Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | N-Channel |
Teknolojia | GaNFET (Gallium Nitride) |
Futa kwa Chanzo cha Voltage (Vdss) | 100V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 500mA (Ta) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 3.3 Ohm @ 50mA, 5V |
Vgs (th) (Max) @ Id | 2.5V @ 20µA |
Malipo ya Lango (Qg) (Max) @ Vgs | 0.044nC @ 5V |
Vgs (Upeo) | +6V, -4V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 8.4pF @ 50V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | - |
Joto la Uendeshaji | -40°C ~ 150°C (TJ) |
Aina ya Kuweka | Surface Mount |
Kifurushi cha Kifaa cha muuzaji | Die |
Kifurushi / Kesi | Die |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |