| Andika | Maelezo. |
| Hali ya Sehemu | Active |
|---|---|
| Aina ya FET | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| Makala ya FET | GaNFET (Gallium Nitride) |
| Futa kwa Chanzo cha Voltage (Vdss) | 100V |
| Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 1.7A, 500mA |
| Rds On (Max) @ Id, Vgs | 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
| Vgs (th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |
| Malipo ya Lango (Qg) (Max) @ Vgs | 0.16nC @ 5V, 0.044nC @ 5V |
| Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 16pF @ 50V, 7pF @ 50V |
| Nguvu - Max | - |
| Joto la Uendeshaji | -40°C ~ 150°C (TJ) |
| Aina ya Kuweka | Surface Mount |
| Kifurushi / Kesi | 9-VFBGA |
| Kifurushi cha Kifaa cha muuzaji | 9-BGA (1.35x1.35) |
| Hali ya RoHS. | Rohs inakubaliana. |
|---|---|
| Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
| Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
| Stock Jamii. | Inapatikana hisa. |
