| Andika | Maelezo. |
| Hali ya Sehemu | Active |
|---|---|
| Aina ya FET | P-Channel |
| Teknolojia | MOSFET (Metal Oxide) |
| Futa kwa Chanzo cha Voltage (Vdss) | 60V |
| Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 3A (Ta) |
| Voltage ya Kuendesha (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 3A, 10V |
| Vgs (th) (Max) @ Id | 3V @ 250µA |
| Malipo ya Lango (Qg) (Max) @ Vgs | 21nC @ 10V |
| Vgs (Upeo) | ±20V |
| Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 714pF @ 30V |
| Makala ya FET | Schottky Diode (Isolated) |
| Utoaji wa Nguvu (Max) | 900mW (Ta) |
| Joto la Uendeshaji | -55°C ~ 150°C (TJ) |
| Aina ya Kuweka | Surface Mount |
| Kifurushi cha Kifaa cha muuzaji | 8-SOIC |
| Kifurushi / Kesi | 8-SOIC (0.154", 3.90mm Width) |
| Hali ya RoHS. | Rohs inakubaliana. |
|---|---|
| Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
| Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
| Stock Jamii. | Inapatikana hisa. |
