Andika | Maelezo. |
Hali ya Sehemu | Obsolete |
---|---|
Aina ya FET | N-Channel |
Teknolojia | MOSFET (Metal Oxide) |
Futa kwa Chanzo cha Voltage (Vdss) | 55V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 100A (Tc) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 80A, 10V |
Vgs (th) (Max) @ Id | 4V @ 1mA |
Malipo ya Lango (Qg) (Max) @ Vgs | 100nC @ 10V |
Vgs (Upeo) | ±20V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | - |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | - |
Joto la Uendeshaji | -55°C ~ 175°C (TJ) |
Aina ya Kuweka | Through Hole |
Kifurushi cha Kifaa cha muuzaji | ISOPLUS i4-PAC™ |
Kifurushi / Kesi | i4-Pac™-5 |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |