Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | - |
Teknolojia | SiC (Silicon Carbide Junction Transistor) |
Futa kwa Chanzo cha Voltage (Vdss) | 1200V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 45A (Tc) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 20A |
Vgs (th) (Max) @ Id | - |
Malipo ya Lango (Qg) (Max) @ Vgs | - |
Vgs (Upeo) | - |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 3091pF @ 800V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 282W (Tc) |
Joto la Uendeshaji | 175°C (TJ) |
Aina ya Kuweka | Surface Mount |
Kifurushi cha Kifaa cha muuzaji | D2PAK (7-Lead) |
Kifurushi / Kesi | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |