Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | P-Channel |
Teknolojia | MOSFET (Metal Oxide) |
Futa kwa Chanzo cha Voltage (Vdss) | 30V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 9.2A (Ta) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 19.4 mOhm @ 9.2A, 10V |
Vgs (th) (Max) @ Id | 2.4V @ 25µA |
Malipo ya Lango (Qg) (Max) @ Vgs | 38nC @ 10V |
Vgs (Upeo) | ±20V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 1110pF @ 25V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 2.5W (Ta) |
Joto la Uendeshaji | -55°C ~ 150°C (TJ) |
Aina ya Kuweka | Surface Mount |
Kifurushi cha Kifaa cha muuzaji | 8-SO |
Kifurushi / Kesi | 8-SOIC (0.154", 3.90mm Width) |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |