| Andika | Maelezo. |
| Hali ya Sehemu | Active |
|---|---|
| Aina ya FET | P-Channel |
| Teknolojia | MOSFET (Metal Oxide) |
| Futa kwa Chanzo cha Voltage (Vdss) | 200V |
| Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 560mA (Ta) |
| Voltage ya Kuendesha (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 340mA, 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA |
| Malipo ya Lango (Qg) (Max) @ Vgs | 15nC @ 10V |
| Vgs (Upeo) | ±20V |
| Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 340pF @ 25V |
| Makala ya FET | - |
| Utoaji wa Nguvu (Max) | 1W (Ta) |
| Joto la Uendeshaji | -55°C ~ 150°C (TJ) |
| Aina ya Kuweka | Through Hole |
| Kifurushi cha Kifaa cha muuzaji | 4-DIP, Hexdip, HVMDIP |
| Kifurushi / Kesi | 4-DIP (0.300", 7.62mm) |
| Hali ya RoHS. | Rohs inakubaliana. |
|---|---|
| Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
| Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
| Stock Jamii. | Inapatikana hisa. |
