| Andika | Maelezo. |
| Hali ya Sehemu | Not For New Designs |
|---|---|
| Aina ya FET | P-Channel |
| Teknolojia | MOSFET (Metal Oxide) |
| Futa kwa Chanzo cha Voltage (Vdss) | 100V |
| Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 13A (Tc) |
| Voltage ya Kuendesha (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 6.5A, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA |
| Malipo ya Lango (Qg) (Max) @ Vgs | 40nC @ 10V |
| Vgs (Upeo) | ±20V |
| Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 2400pF @ 25V |
| Makala ya FET | - |
| Utoaji wa Nguvu (Max) | 850mW (Ta), 20W (Tc) |
| Joto la Uendeshaji | 150°C (TJ) |
| Aina ya Kuweka | Surface Mount |
| Kifurushi cha Kifaa cha muuzaji | CPT3 |
| Kifurushi / Kesi | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Hali ya RoHS. | Rohs inakubaliana. |
|---|---|
| Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
| Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
| Stock Jamii. | Inapatikana hisa. |
