Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | P-Channel |
Teknolojia | MOSFET (Metal Oxide) |
Futa kwa Chanzo cha Voltage (Vdss) | 30V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 7.5A (Ta) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 7.5A, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 1mA |
Malipo ya Lango (Qg) (Max) @ Vgs | 30nC @ 5V |
Vgs (Upeo) | ±20V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 2900pF @ 10V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 2W (Ta) |
Joto la Uendeshaji | 150°C (TJ) |
Aina ya Kuweka | Surface Mount |
Kifurushi cha Kifaa cha muuzaji | 8-SOP |
Kifurushi / Kesi | 8-SOIC (0.154", 3.90mm Width) |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |