| Andika | Maelezo. |
| Hali ya Sehemu | Active |
|---|---|
| Aina ya FET | N-Channel |
| Teknolojia | SiCFET (Silicon Carbide) |
| Futa kwa Chanzo cha Voltage (Vdss) | 1200V |
| Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 12A (Tc) |
| Voltage ya Kuendesha (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 690 mOhm @ 6A, 20V |
| Vgs (th) (Max) @ Id | 3.5V @ 250µA |
| Malipo ya Lango (Qg) (Max) @ Vgs | 22nC @ 20V |
| Vgs (Upeo) | +25V, -10V |
| Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 290pF @ 400V |
| Makala ya FET | - |
| Utoaji wa Nguvu (Max) | 150W (Tc) |
| Joto la Uendeshaji | -55°C ~ 200°C (TJ) |
| Aina ya Kuweka | Through Hole |
| Kifurushi cha Kifaa cha muuzaji | HiP247™ |
| Kifurushi / Kesi | TO-247-3 |
| Hali ya RoHS. | Rohs inakubaliana. |
|---|---|
| Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
| Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
| Stock Jamii. | Inapatikana hisa. |
