| Andika | Maelezo. |
| Hali ya Sehemu | Active |
|---|---|
| Aina ya FET | N-Channel |
| Teknolojia | SiCFET (Silicon Carbide) |
| Futa kwa Chanzo cha Voltage (Vdss) | 1200V |
| Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 14A (Tc) |
| Voltage ya Kuendesha (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 364 mOhm @ 4A, 18V |
| Vgs (th) (Max) @ Id | 4V @ 1.4mA |
| Malipo ya Lango (Qg) (Max) @ Vgs | 36nC @ 18V |
| Vgs (Upeo) | +22V, -6V |
| Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 667pF @ 800V |
| Makala ya FET | - |
| Utoaji wa Nguvu (Max) | 108W (Tc) |
| Joto la Uendeshaji | 175°C (TJ) |
| Aina ya Kuweka | Through Hole |
| Kifurushi cha Kifaa cha muuzaji | TO-247 |
| Kifurushi / Kesi | TO-247-3 |
| Hali ya RoHS. | Rohs inakubaliana. |
|---|---|
| Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
| Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
| Stock Jamii. | Inapatikana hisa. |
