Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | N-Channel |
Teknolojia | SiCFET (Silicon Carbide) |
Futa kwa Chanzo cha Voltage (Vdss) | 650V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 93A (Tc) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 28.6 mOhm @ 36A, 18V |
Vgs (th) (Max) @ Id | 5.6V @ 18.2mA |
Malipo ya Lango (Qg) (Max) @ Vgs | 133nC @ 18V |
Vgs (Upeo) | +22V, -4V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 2208pF @ 500V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 339W (Tc) |
Joto la Uendeshaji | 175°C (TJ) |
Aina ya Kuweka | Through Hole |
Kifurushi cha Kifaa cha muuzaji | TO-247N |
Kifurushi / Kesi | TO-247-3 |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |