Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | P-Channel |
Teknolojia | MOSFET (Metal Oxide) |
Futa kwa Chanzo cha Voltage (Vdss) | 8V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 11.7A (Tc) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 1A, 4.5V |
Vgs (th) (Max) @ Id | 800mV @ 250µA |
Malipo ya Lango (Qg) (Max) @ Vgs | 26nC @ 5V |
Vgs (Upeo) | ±5V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 1640pF @ 4V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 2.77W (Ta), 6.25W (Tc) |
Joto la Uendeshaji | -55°C ~ 150°C (TJ) |
Aina ya Kuweka | Surface Mount |
Kifurushi cha Kifaa cha muuzaji | 4-Microfoot |
Kifurushi / Kesi | 4-XFBGA, CSPBGA |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |