| Andika | Maelezo. |
| Hali ya Sehemu | Not For New Designs |
|---|---|
| Aina ya FET | N-Channel |
| Teknolojia | GaNFET (Gallium Nitride) |
| Futa kwa Chanzo cha Voltage (Vdss) | 650V |
| Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 16A (Tc) |
| Voltage ya Kuendesha (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 10A, 8V |
| Vgs (th) (Max) @ Id | 2.6V @ 500µA |
| Malipo ya Lango (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
| Vgs (Upeo) | ±18V |
| Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 720pF @ 480V |
| Makala ya FET | - |
| Utoaji wa Nguvu (Max) | 81W (Tc) |
| Joto la Uendeshaji | -55°C ~ 150°C (TJ) |
| Aina ya Kuweka | Surface Mount |
| Kifurushi cha Kifaa cha muuzaji | PQFN (8x8) |
| Kifurushi / Kesi | 3-PowerDFN |
| Hali ya RoHS. | Rohs inakubaliana. |
|---|---|
| Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
| Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
| Stock Jamii. | Inapatikana hisa. |
