Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | N-Channel |
Teknolojia | MOSFET (Metal Oxide) |
Futa kwa Chanzo cha Voltage (Vdss) | 200V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 7.2A (Ta) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 114 mOhm @ 3.6A, 10V |
Vgs (th) (Max) @ Id | 4V @ 200µA |
Malipo ya Lango (Qg) (Max) @ Vgs | 7nC @ 10V |
Vgs (Upeo) | ±20V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 600pF @ 100V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 700mW (Ta), 39W (Tc) |
Joto la Uendeshaji | 150°C (TJ) |
Aina ya Kuweka | Surface Mount |
Kifurushi cha Kifaa cha muuzaji | 8-TSON Advance (3.3x3.3) |
Kifurushi / Kesi | 8-PowerVDFN |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |