Andika | Maelezo. |
Hali ya Sehemu | Active |
---|---|
Aina ya FET | N-Channel |
Teknolojia | MOSFET (Metal Oxide) |
Futa kwa Chanzo cha Voltage (Vdss) | 100V |
Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C | 9.4A (Tc) |
Voltage ya Kuendesha (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 4.7A, 10V |
Vgs (th) (Max) @ Id | 4V @ 100µA |
Malipo ya Lango (Qg) (Max) @ Vgs | 11nC @ 10V |
Vgs (Upeo) | ±20V |
Uwezo wa Kuingiza (Ciss) (Max) @ Vds | 880pF @ 50V |
Makala ya FET | - |
Utoaji wa Nguvu (Max) | 700mW (Ta), 27W (Tc) |
Joto la Uendeshaji | 150°C (TJ) |
Aina ya Kuweka | Surface Mount |
Kifurushi cha Kifaa cha muuzaji | 8-TSON Advance (3.3x3.3) |
Kifurushi / Kesi | 8-PowerVDFN |
Hali ya RoHS. | Rohs inakubaliana. |
---|---|
Ngazi ya unyeti wa unyevu (MSL) | Haitumiki |
Hali ya LifeCycle. | Kizamani / mwisho wa maisha. |
Stock Jamii. | Inapatikana hisa. |