Sehemu ya hisa.: 121
Aina ya FET: 4 N-Channel (Three Level Inverter), Makala ya FET: Silicon Carbide (SiC), Futa kwa Chanzo cha Voltage (Vdss): 1200V (1.2kV), Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 219A (Tc), Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 30mA (Typ),