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Transistors - FETs, MOSFETs - safu

QS8M13TCR
Rohm Semiconductor

QS8M13TCR

Sehemu ya hisa.: 158531

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, 5A, Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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SP8J2TB
Rohm Semiconductor

SP8J2TB

Sehemu ya hisa.: 2628

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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SH8M41GZETB
Rohm Semiconductor

SH8M41GZETB

Sehemu ya hisa.: 127920

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, 4V Drive, Futa kwa Chanzo cha Voltage (Vdss): 80V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, 2.6A, Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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QH8MA2TCR
Rohm Semiconductor

QH8MA2TCR

Sehemu ya hisa.: 145176

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, 3A, Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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SH8K22TB1
Rohm Semiconductor

SH8K22TB1

Sehemu ya hisa.: 169285

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 45V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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QS6M3TR
Rohm Semiconductor

QS6M3TR

Sehemu ya hisa.: 170246

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.5A, Rds On (Max) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

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QS6J1TR
Rohm Semiconductor

QS6J1TR

Sehemu ya hisa.: 160158

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.5A, Rds On (Max) @ Id, Vgs: 215 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

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HUFA76407DK8T-F085
ON Semiconductor

HUFA76407DK8T-F085

Sehemu ya hisa.: 3322

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Rds On (Max) @ Id, Vgs: 90 mOhm @ 3.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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FDMC8200S
ON Semiconductor

FDMC8200S

Sehemu ya hisa.: 148692

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, 8.5A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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NTHD3102CT1G
ON Semiconductor

NTHD3102CT1G

Sehemu ya hisa.: 118797

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4A, 3.1A, Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

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FDC3601N
ON Semiconductor

FDC3601N

Sehemu ya hisa.: 102462

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1A, Rds On (Max) @ Id, Vgs: 500 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

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IRF7389TRPBF
Infineon Technologies

IRF7389TRPBF

Sehemu ya hisa.: 166810

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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IRF7907TRPBF
Infineon Technologies

IRF7907TRPBF

Sehemu ya hisa.: 173843

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 9.1A, 11A, Rds On (Max) @ Id, Vgs: 16.4 mOhm @ 9.1A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

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IRFHM792TRPBF
Infineon Technologies

IRFHM792TRPBF

Sehemu ya hisa.: 82378

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.3A, Rds On (Max) @ Id, Vgs: 195 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 4V @ 10µA,

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IRF7506TRPBF
Infineon Technologies

IRF7506TRPBF

Sehemu ya hisa.: 149700

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A, Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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IRF9362TRPBF
Infineon Technologies

IRF9362TRPBF

Sehemu ya hisa.: 188725

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 8A, Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 25µA,

Kwa wishlist.
IRF7509TRPBF
Infineon Technologies

IRF7509TRPBF

Sehemu ya hisa.: 158332

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.7A, 2A, Rds On (Max) @ Id, Vgs: 110 mOhm @ 1.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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IPG20N06S4L14AATMA1
Infineon Technologies

IPG20N06S4L14AATMA1

Sehemu ya hisa.: 125877

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 20A, Rds On (Max) @ Id, Vgs: 13.7 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

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DMP2004VK-7
Diodes Incorporated

DMP2004VK-7

Sehemu ya hisa.: 179589

Aina ya FET: 2 P-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 530mA, Rds On (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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ZXMN3AM832TA
Diodes Incorporated

ZXMN3AM832TA

Sehemu ya hisa.: 2640

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 2.9A, Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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DMN61D9UDW-7
Diodes Incorporated

DMN61D9UDW-7

Sehemu ya hisa.: 182168

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 350mA, Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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DMC2700UDM-7
Diodes Incorporated

DMC2700UDM-7

Sehemu ya hisa.: 130711

Aina ya FET: N and P-Channel, Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.34A, 1.14A, Rds On (Max) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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DMHC3025LSD-13
Diodes Incorporated

DMHC3025LSD-13

Sehemu ya hisa.: 180355

Aina ya FET: 2 N and 2 P-Channel (H-Bridge), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 6A, 4.2A, Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

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SI1034CX-T1-GE3
Vishay Siliconix

SI1034CX-T1-GE3

Sehemu ya hisa.: 141761

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 610mA (Ta), Rds On (Max) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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SQ1922EEH-T1_GE3
Vishay Siliconix

SQ1922EEH-T1_GE3

Sehemu ya hisa.: 2536

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 840mA (Tc), Rds On (Max) @ Id, Vgs: 350 mOhm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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SQJB68EP-T1_GE3
Vishay Siliconix

SQJB68EP-T1_GE3

Sehemu ya hisa.: 2512

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 11A (Tc), Rds On (Max) @ Id, Vgs: 92 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SIA906EDJ-T1-GE3
Vishay Siliconix

SIA906EDJ-T1-GE3

Sehemu ya hisa.: 181601

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.5A, Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

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SI7228DN-T1-GE3
Vishay Siliconix

SI7228DN-T1-GE3

Sehemu ya hisa.: 108156

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 26A, Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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SIZ200DT-T1-GE3
Vishay Siliconix

SIZ200DT-T1-GE3

Sehemu ya hisa.: 2544

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

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SI5908DC-T1-E3
Vishay Siliconix

SI5908DC-T1-E3

Sehemu ya hisa.: 118929

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 4.4A, Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Kwa wishlist.
SQJ912BEP-T1_GE3
Vishay Siliconix

SQJ912BEP-T1_GE3

Sehemu ya hisa.: 2589

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 40V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 30A (Tc), Rds On (Max) @ Id, Vgs: 11 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Kwa wishlist.
SQ1912EH-T1_GE3
Vishay Siliconix

SQ1912EH-T1_GE3

Sehemu ya hisa.: 132067

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 20V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 280 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Kwa wishlist.
SI7272DP-T1-GE3
Vishay Siliconix

SI7272DP-T1-GE3

Sehemu ya hisa.: 110674

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Logic Level Gate, Futa kwa Chanzo cha Voltage (Vdss): 30V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 25A, Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

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NX138AKSF
Nexperia USA Inc.

NX138AKSF

Sehemu ya hisa.: 110186

Aina ya FET: 2 N-Channel (Dual), Makala ya FET: Standard, Futa kwa Chanzo cha Voltage (Vdss): 60V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 170mA (Ta), Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 170mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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EPC2110
EPC

EPC2110

Sehemu ya hisa.: 26911

Aina ya FET: 2 N-Channel (Dual) Common Source, Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 120V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 3.4A, Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 700µA,

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EPC2108
EPC

EPC2108

Sehemu ya hisa.: 83651

Aina ya FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Makala ya FET: GaNFET (Gallium Nitride), Futa kwa Chanzo cha Voltage (Vdss): 60V, 100V, Mtiririko wa Sasa wa Kuendelea (Id) @ 25 ° C: 1.7A, 500mA, Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

Kwa wishlist.