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Diode - Zener - Moja

1N4757AHA0G
Taiwan Semiconductor Corporation

1N4757AHA0G

Sehemu ya hisa.: 212

Voltage - Zener (Nom) (Vz): 51V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 95 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 38.8V,

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1N4746A A0G
Taiwan Semiconductor Corporation

1N4746A A0G

Sehemu ya hisa.: 139

Voltage - Zener (Nom) (Vz): 18V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 35 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 13.7V,

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1N4763AHA0G
Taiwan Semiconductor Corporation

1N4763AHA0G

Sehemu ya hisa.: 151

Voltage - Zener (Nom) (Vz): 91V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 250 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 69.2V,

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1N4756AHB0G
Taiwan Semiconductor Corporation

1N4756AHB0G

Sehemu ya hisa.: 162

Voltage - Zener (Nom) (Vz): 47V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 80 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 35.8V,

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1N4751A R1G
Taiwan Semiconductor Corporation

1N4751A R1G

Sehemu ya hisa.: 206

Voltage - Zener (Nom) (Vz): 30V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 40 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 22.8V,

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1M130ZHR1G
Taiwan Semiconductor Corporation

1M130ZHR1G

Sehemu ya hisa.: 200

Voltage - Zener (Nom) (Vz): 130V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 700 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 98.8V,

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1N4762A B0G
Taiwan Semiconductor Corporation

1N4762A B0G

Sehemu ya hisa.: 165

Voltage - Zener (Nom) (Vz): 82V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 200 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 62.2V,

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1N4741AHR1G
Taiwan Semiconductor Corporation

1N4741AHR1G

Sehemu ya hisa.: 179

Voltage - Zener (Nom) (Vz): 11V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 22 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 15.2V,

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1N4761A R1G
Taiwan Semiconductor Corporation

1N4761A R1G

Sehemu ya hisa.: 138

Voltage - Zener (Nom) (Vz): 75V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 175 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 56V,

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1N4764AHB0G
Taiwan Semiconductor Corporation

1N4764AHB0G

Sehemu ya hisa.: 185

Voltage - Zener (Nom) (Vz): 100V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 350 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 76V,

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1M160Z R1G
Taiwan Semiconductor Corporation

1M160Z R1G

Sehemu ya hisa.: 198

Voltage - Zener (Nom) (Vz): 160V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 1100 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 121.6V,

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1M110Z A0G
Taiwan Semiconductor Corporation

1M110Z A0G

Sehemu ya hisa.: 188

Voltage - Zener (Nom) (Vz): 110V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 450 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 83.6V,

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1N4749A B0G
Taiwan Semiconductor Corporation

1N4749A B0G

Sehemu ya hisa.: 200

Voltage - Zener (Nom) (Vz): 24V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 25 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 18.2V,

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1M200Z A0G
Taiwan Semiconductor Corporation

1M200Z A0G

Sehemu ya hisa.: 215

Voltage - Zener (Nom) (Vz): 200V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 1500 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 152V,

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1N4753A R1G
Taiwan Semiconductor Corporation

1N4753A R1G

Sehemu ya hisa.: 197

Voltage - Zener (Nom) (Vz): 36V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 50 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 27.4V,

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1N4763AHB0G
Taiwan Semiconductor Corporation

1N4763AHB0G

Sehemu ya hisa.: 125

Voltage - Zener (Nom) (Vz): 91V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 250 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 69.2V,

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1N4750A A0G
Taiwan Semiconductor Corporation

1N4750A A0G

Sehemu ya hisa.: 168

Voltage - Zener (Nom) (Vz): 27V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 35 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 20.6V,

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1M110Z B0G
Taiwan Semiconductor Corporation

1M110Z B0G

Sehemu ya hisa.: 150

Voltage - Zener (Nom) (Vz): 110V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 450 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 83.6V,

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1N4746A R1G
Taiwan Semiconductor Corporation

1N4746A R1G

Sehemu ya hisa.: 189

Voltage - Zener (Nom) (Vz): 18V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 40 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 13.7V,

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1N4746AHA0G
Taiwan Semiconductor Corporation

1N4746AHA0G

Sehemu ya hisa.: 168

Voltage - Zener (Nom) (Vz): 18V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 45 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 13.7V,

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1N4763A A0G
Taiwan Semiconductor Corporation

1N4763A A0G

Sehemu ya hisa.: 176

Voltage - Zener (Nom) (Vz): 91V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 250 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 69.2V,

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1N4747AHR1G
Taiwan Semiconductor Corporation

1N4747AHR1G

Sehemu ya hisa.: 173

Voltage - Zener (Nom) (Vz): 20V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 95 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 15.2V,

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1M180Z R1G
Taiwan Semiconductor Corporation

1M180Z R1G

Sehemu ya hisa.: 202

Voltage - Zener (Nom) (Vz): 180V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 1200 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 136.8V,

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1N4741A R1G
Taiwan Semiconductor Corporation

1N4741A R1G

Sehemu ya hisa.: 156

Voltage - Zener (Nom) (Vz): 11V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 16 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 12.2V,

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1N4749AHR1G
Taiwan Semiconductor Corporation

1N4749AHR1G

Sehemu ya hisa.: 128

Voltage - Zener (Nom) (Vz): 24V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 25 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 18.2V,

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1N4758A R1G
Taiwan Semiconductor Corporation

1N4758A R1G

Sehemu ya hisa.: 167

Voltage - Zener (Nom) (Vz): 56V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 110 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 42.6V,

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1N4740AHB0G
Taiwan Semiconductor Corporation

1N4740AHB0G

Sehemu ya hisa.: 160

Voltage - Zener (Nom) (Vz): 10V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 8 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 8.4V,

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1M200Z R1G
Taiwan Semiconductor Corporation

1M200Z R1G

Sehemu ya hisa.: 171

Voltage - Zener (Nom) (Vz): 200V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 1500 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 152V,

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1N4753AHR1G
Taiwan Semiconductor Corporation

1N4753AHR1G

Sehemu ya hisa.: 142

Voltage - Zener (Nom) (Vz): 36V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 50 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 27.4V,

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1N4747A R1G
Taiwan Semiconductor Corporation

1N4747A R1G

Sehemu ya hisa.: 119

Voltage - Zener (Nom) (Vz): 20V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 70 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 15.2V,

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1N4751AHR1G
Taiwan Semiconductor Corporation

1N4751AHR1G

Sehemu ya hisa.: 172

Voltage - Zener (Nom) (Vz): 30V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 40 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 22.8V,

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1M120ZHB0G
Taiwan Semiconductor Corporation

1M120ZHB0G

Sehemu ya hisa.: 131

Voltage - Zener (Nom) (Vz): 120V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 550 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 91.2V,

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1N4746AHR1G
Taiwan Semiconductor Corporation

1N4746AHR1G

Sehemu ya hisa.: 123

Voltage - Zener (Nom) (Vz): 18V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 50 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 13.7V,

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1N4743A A0G
Taiwan Semiconductor Corporation

1N4743A A0G

Sehemu ya hisa.: 177

Voltage - Zener (Nom) (Vz): 13V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 60 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 29.7V,

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1N4761A A0G
Taiwan Semiconductor Corporation

1N4761A A0G

Sehemu ya hisa.: 179

Voltage - Zener (Nom) (Vz): 75V, Uvumilivu: ±5%, Nguvu - Max: 1W, Impedance (Max) (Zzt): 175 Ohms, Sasa - Reverse Leakage @ Vr: 5µA @ 56V,

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1N4370A TR
Central Semiconductor Corp

1N4370A TR

Sehemu ya hisa.: 177762

Voltage - Zener (Nom) (Vz): 2.4V, Nguvu - Max: 500mW,

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