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Diode - Warekebishaji - Moja

1N4586GP-E3/54
Vishay Semiconductor Diodes Division

1N4586GP-E3/54

Sehemu ya hisa.: 168864

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 2µs,

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1N4595R
GeneSiC Semiconductor

1N4595R

Sehemu ya hisa.: 2917

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 1200V, Sasa - Wastani Waliyorekebishwa (Io): 150A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 150A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N6098
GeneSiC Semiconductor

1N6098

Sehemu ya hisa.: 4336

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 50A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 50A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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1N3889
GeneSiC Semiconductor

1N3889

Sehemu ya hisa.: 12061

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 12A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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1N3893R
GeneSiC Semiconductor

1N3893R

Sehemu ya hisa.: 9557

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 12A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 200ns,

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1N1188R
GeneSiC Semiconductor

1N1188R

Sehemu ya hisa.: 14337

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 35A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 35A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N2131AR
GeneSiC Semiconductor

1N2131AR

Sehemu ya hisa.: 7092

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 60A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 60A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N1200A
GeneSiC Semiconductor

1N1200A

Sehemu ya hisa.: 15967

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 12A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 12A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N1190AR
GeneSiC Semiconductor

1N1190AR

Sehemu ya hisa.: 10679

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 40A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 40A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N1190A
GeneSiC Semiconductor

1N1190A

Sehemu ya hisa.: 11089

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 40A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 40A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N2138AR
GeneSiC Semiconductor

1N2138AR

Sehemu ya hisa.: 7743

Aina ya Diode: Standard, Reverse Polarity, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 60A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 60A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N5553US
Microsemi Corporation

1N5553US

Sehemu ya hisa.: 5530

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 9A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 2µs,

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1N4150-1
Microsemi Corporation

1N4150-1

Sehemu ya hisa.: 35775

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 200mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 200mA, Kasi: Small Signal =< 200mA (Io), Any Speed, Rudisha Saa ya Kuokoa (trr): 4ns,

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1N5553
Microsemi Corporation

1N5553

Sehemu ya hisa.: 6439

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 9A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 2µs,

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1N6640US
Microsemi Corporation

1N6640US

Sehemu ya hisa.: 6262

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 75V, Sasa - Wastani Waliyorekebishwa (Io): 300mA (DC), Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 200mA, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 4ns,

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1N6622
Microsemi Corporation

1N6622

Sehemu ya hisa.: 5407

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1.2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.4V @ 1.2A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 45ns,

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1N5804US
Microsemi Corporation

1N5804US

Sehemu ya hisa.: 6351

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 875mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 25ns,

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1N5552
Microsemi Corporation

1N5552

Sehemu ya hisa.: 6290

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 9A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 2µs,

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1N6080
Microsemi Corporation

1N6080

Sehemu ya hisa.: 1677

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 2A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 37.7A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 30ns,

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1N3595US
Microsemi Corporation

1N3595US

Sehemu ya hisa.: 5411

Aina ya Diode: Standard, Sasa - Wastani Waliyorekebishwa (Io): 4A (DC), Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 200mA, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 3µs,

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1N5616US
Microsemi Corporation

1N5616US

Sehemu ya hisa.: 8604

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 400V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 2µs,

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1N3611
Microsemi Corporation

1N3611

Sehemu ya hisa.: 7627

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.1V @ 1A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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1N5619US
Microsemi Corporation

1N5619US

Sehemu ya hisa.: 6582

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.6V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 250ns,

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1N914UR
Microsemi Corporation

1N914UR

Sehemu ya hisa.: 24811

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 75V, Sasa - Wastani Waliyorekebishwa (Io): 200mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 50mA, Kasi: Small Signal =< 200mA (Io), Any Speed, Rudisha Saa ya Kuokoa (trr): 20ns,

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1N5619
Microsemi Corporation

1N5619

Sehemu ya hisa.: 9843

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 600V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.6V @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 250ns,

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1N5416US
Microsemi Corporation

1N5416US

Sehemu ya hisa.: 5319

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 100V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.5V @ 9A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 150ns,

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1N5807
Microsemi Corporation

1N5807

Sehemu ya hisa.: 6580

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 50V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 875mV @ 4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 30ns,

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1N5554
Microsemi Corporation

1N5554

Sehemu ya hisa.: 6400

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 1000V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 9A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 2µs,

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1N5711-1
Microsemi Corporation

1N5711-1

Sehemu ya hisa.: 7979

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 70V, Sasa - Wastani Waliyorekebishwa (Io): 33mA, Voltage - Sambaza (Vf) (Max) @ Kama: 1V @ 15mA, Kasi: Small Signal =< 200mA (Io), Any Speed,

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1N5620
Microsemi Corporation

1N5620

Sehemu ya hisa.: 10754

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 800V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.3V @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 2µs,

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1N5550
Microsemi Corporation

1N5550

Sehemu ya hisa.: 7965

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 200V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 1.2V @ 9A, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 2µs,

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1N5822US
Microsemi Corporation

1N5822US

Sehemu ya hisa.: 643

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 500mV @ 3A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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1C5819.T
SMC Diode Solutions

1C5819.T

Sehemu ya hisa.: 90011

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 20V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 450mV @ 1A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

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1C5822.T
SMC Diode Solutions

1C5822.T

Sehemu ya hisa.: 90043

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 3A, Voltage - Sambaza (Vf) (Max) @ Kama: 700mV @ 9.4A, Kasi: Fast Recovery =< 500ns, > 200mA (Io),

Kwa wishlist.
1N3647
Semtech Corporation

1N3647

Sehemu ya hisa.: 7939

Aina ya Diode: Standard, Voltage - Kubadilisha DC (Vr) (Max): 3000V, Sasa - Wastani Waliyorekebishwa (Io): 600mA, Voltage - Sambaza (Vf) (Max) @ Kama: 5V @ 250mA, Kasi: Standard Recovery >500ns, > 200mA (Io), Rudisha Saa ya Kuokoa (trr): 2.5µs,

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1N5819HW-13
Diodes Incorporated

1N5819HW-13

Sehemu ya hisa.: 2626

Aina ya Diode: Schottky, Voltage - Kubadilisha DC (Vr) (Max): 40V, Sasa - Wastani Waliyorekebishwa (Io): 1A, Voltage - Sambaza (Vf) (Max) @ Kama: 750mV @ 3A, Kasi: Standard Recovery >500ns, > 200mA (Io),

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